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Abstract
Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.
Translated title of the contribution | High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices |
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Original language | English |
Pages (from-to) | 1838 - 1842 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 54(8) |
DOIs | |
Publication status | Published - Aug 2007 |
Bibliographical note
Publisher: IEEE Electron Devices SocietyResearch Groups and Themes
- CDTR
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- 1 Finished
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THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY
Kuball, M. H. H. (Principal Investigator)
19/03/04 → 19/03/07
Project: Research