High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices

A Sarua; A Bullen; M Haynes; M Kuball

doi:10.1109/TED.2007.901349

High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices

A Sarua, A Bullen, M Haynes, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

19 Citations (Scopus)

Abstract

Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.

Translated title of the contribution	High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices
Original language	English
Pages (from-to)	1838 - 1842
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54(8)
DOIs	https://doi.org/10.1109/TED.2007.901349
Publication status	Published - Aug 2007

Bibliographical note

Publisher: IEEE Electron Devices Society

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10.1109/TED.2007.901349

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THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY
Kuball, M. H. H.
19/03/04 → 19/03/07
Project: Research

Cite this

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title = "High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices",

abstract = "Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.",

author = "A Sarua and A Bullen and M Haynes and M Kuball",

note = "Publisher: IEEE Electron Devices Society",

year = "2007",

month = aug,

doi = "10.1109/TED.2007.901349",

language = "English",

volume = "54(8)",

pages = "1838 -- 1842",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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T1 - High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices

AU - Sarua, A

AU - Bullen, A

AU - Haynes, M

AU - Kuball, M

N1 - Publisher: IEEE Electron Devices Society

PY - 2007/8

Y1 - 2007/8

N2 - Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.

AB - Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.

U2 - 10.1109/TED.2007.901349

DO - 10.1109/TED.2007.901349

M3 - Article (Academic Journal)

VL - 54(8)

SP - 1838

EP - 1842

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -

High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices

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THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY

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