High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices

A Sarua, A Bullen, M Haynes, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

19 Citations (Scopus)

Abstract

Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.
Translated title of the contributionHigh-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices
Original languageEnglish
Pages (from-to)1838 - 1842
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume54(8)
DOIs
Publication statusPublished - Aug 2007

Bibliographical note

Publisher: IEEE Electron Devices Society

Structured keywords

  • CDTR

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