High temperature annealing of AlGaN: Stress and composition changes

A Sarua, S Rajasingam, M Kuball, CM Younes, B Yavich, WN Wang

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

Atomic force microscopy, micro-Raman scattering and Auger spectroscopy were applied to study stress and material composition in Al0.34Ga0.66N grown by MOCHA on sapphire. Samples were annealed in N-2, O-2 and air ambient between 800 degreesC and 1200 degreesC. Annealing at temperatures above 800 C led to composition changes, cracks and defect formation resulting in stress release. Additionally, a change of built-in stress from tensile to compressive was observed after air annealing. Auger spectroscopy analysis showed this switching of stress to be related to oxygen incorporation. Oxygen accumulates in areas of macroscopic cracks as well as microscopic defects. Oxygen diffusion in AlxGa1-xN was found to be largely enhanced in the presence of water vapor in oxygen ambient. Samples were thermally stable up to 1100 degreesC in nitrogen and oxygen. Annealing in air led to a large surface oxidation.
Translated title of the contributionHigh temperature annealing of AlGaN: Stress and composition changes
Original languageEnglish
Title of host publicationInt. Workshop on Nitride Semiconductors (IWN 2002) Aachen, Germany July 2002
EditorsHoffmann , A A; Rizzi
PublisherWiley-VCH Verlag
Pages568 - 571
Number of pages4
ISBN (Print)3527404341
Publication statusPublished - 2002

Bibliographical note

Conference Proceedings/Title of Journal: Int. Workshop on Nitride Semiconductors (IWN 2002) Proceedings
Conference Organiser: Res Ctr Julich

Structured keywords

  • CDTR

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