High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

R. Cuerdo; E. Sillero; M. F. Romero; MJ Uren; M. A. D. Poisson; E. Munoz; F. Calle

doi:10.1109/led.2009.2024964

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

R. Cuerdo, E. Sillero, M. F. Romero, MJ Uren, M. A. D. Poisson, E. Munoz, F. Calle

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

16 Citations (Scopus)

Abstract

The effect of temperature on the small-signal radio-frequency (RF) performance of submicron AlGaN/GaN high-electron-mobility transistors on SiC has been studied from room temperature (RT) up to 600 K. A relation between ambient and channel temperatures has been established by means of finite-element simulations. The thermal behavior of the intrinsic parameters C(gs), C(gd), g(m, int), and g(ds) has been extracted accurately from RF measurements by means of the small-signal equivalent circuit. Main dc parameters (I(D), g(m, ext)) show reductions close to 50% between RT and 600 K, mainly due to the decrease in the electron mobility and drift velocity. In the same range, f(T) and f(max) suffer a 60% decrease due to the reduction in g(m, ext) and a slight increase of C(gs) and C(gd). An anomalous thermal evolution of C(gd) at low I(D) has been identified, which is indicative of the presence of traps.

Translated title of the contribution	High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC
Original language	English
Pages (from-to)	808 - 810
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
DOIs	https://doi.org/10.1109/led.2009.2024964
Publication status	Published - Aug 2009

Access to Document

10.1109/led.2009.2024964

Handle.net

Persistent link

Cite this

@article{9cf264df13e94658af914eb73570139b,

title = "High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC",

abstract = "The effect of temperature on the small-signal radio-frequency (RF) performance of submicron AlGaN/GaN high-electron-mobility transistors on SiC has been studied from room temperature (RT) up to 600 K. A relation between ambient and channel temperatures has been established by means of finite-element simulations. The thermal behavior of the intrinsic parameters C(gs), C(gd), g(m, int), and g(ds) has been extracted accurately from RF measurements by means of the small-signal equivalent circuit. Main dc parameters (I(D), g(m, ext)) show reductions close to 50% between RT and 600 K, mainly due to the decrease in the electron mobility and drift velocity. In the same range, f(T) and f(max) suffer a 60% decrease due to the reduction in g(m, ext) and a slight increase of C(gs) and C(gd). An anomalous thermal evolution of C(gd) at low I(D) has been identified, which is indicative of the presence of traps.",

author = "R. Cuerdo and E. Sillero and Romero, {M. F.} and MJ Uren and Poisson, {M. A. D.} and E. Munoz and F. Calle",

year = "2009",

month = aug,

doi = "10.1109/led.2009.2024964",

language = "English",

volume = "30",

pages = "808 -- 810",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

AU - Cuerdo, R.

AU - Sillero, E.

AU - Romero, M. F.

AU - Uren, MJ

AU - Poisson, M. A. D.

AU - Munoz, E.

AU - Calle, F.

PY - 2009/8

Y1 - 2009/8

N2 - The effect of temperature on the small-signal radio-frequency (RF) performance of submicron AlGaN/GaN high-electron-mobility transistors on SiC has been studied from room temperature (RT) up to 600 K. A relation between ambient and channel temperatures has been established by means of finite-element simulations. The thermal behavior of the intrinsic parameters C(gs), C(gd), g(m, int), and g(ds) has been extracted accurately from RF measurements by means of the small-signal equivalent circuit. Main dc parameters (I(D), g(m, ext)) show reductions close to 50% between RT and 600 K, mainly due to the decrease in the electron mobility and drift velocity. In the same range, f(T) and f(max) suffer a 60% decrease due to the reduction in g(m, ext) and a slight increase of C(gs) and C(gd). An anomalous thermal evolution of C(gd) at low I(D) has been identified, which is indicative of the presence of traps.

AB - The effect of temperature on the small-signal radio-frequency (RF) performance of submicron AlGaN/GaN high-electron-mobility transistors on SiC has been studied from room temperature (RT) up to 600 K. A relation between ambient and channel temperatures has been established by means of finite-element simulations. The thermal behavior of the intrinsic parameters C(gs), C(gd), g(m, int), and g(ds) has been extracted accurately from RF measurements by means of the small-signal equivalent circuit. Main dc parameters (I(D), g(m, ext)) show reductions close to 50% between RT and 600 K, mainly due to the decrease in the electron mobility and drift velocity. In the same range, f(T) and f(max) suffer a 60% decrease due to the reduction in g(m, ext) and a slight increase of C(gs) and C(gd). An anomalous thermal evolution of C(gd) at low I(D) has been identified, which is indicative of the presence of traps.

U2 - 10.1109/led.2009.2024964

DO - 10.1109/led.2009.2024964

M3 - Article (Academic Journal)

VL - 30

SP - 808

EP - 810

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

ER -

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

Abstract

Access to Document

Handle.net

Fingerprint

Cite this