High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

R. Cuerdo, E. Sillero, M. F. Romero, MJ Uren, M. A. D. Poisson, E. Munoz, F. Calle

Research output: Contribution to journalArticle (Academic Journal)peer-review

16 Citations (Scopus)


The effect of temperature on the small-signal radio-frequency (RF) performance of submicron AlGaN/GaN high-electron-mobility transistors on SiC has been studied from room temperature (RT) up to 600 K. A relation between ambient and channel temperatures has been established by means of finite-element simulations. The thermal behavior of the intrinsic parameters C(gs), C(gd), g(m, int), and g(ds) has been extracted accurately from RF measurements by means of the small-signal equivalent circuit. Main dc parameters (I(D), g(m, ext)) show reductions close to 50% between RT and 600 K, mainly due to the decrease in the electron mobility and drift velocity. In the same range, f(T) and f(max) suffer a 60% decrease due to the reduction in g(m, ext) and a slight increase of C(gs) and C(gd). An anomalous thermal evolution of C(gd) at low I(D) has been identified, which is indicative of the presence of traps.
Translated title of the contributionHigh-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC
Original languageEnglish
Pages (from-to)808 - 810
Number of pages3
JournalIEEE Electron Device Letters
Publication statusPublished - Aug 2009


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