High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

Physics

• Performance 100%
• Independent Variables 100%
• Temperature 100%
• Room Temperature 100%
• Frequencies 50%
• Simulation 50%
• Behavior 50%
• Speed 50%
• Circuits 50%
• High Temperature 50%
• High Electron Mobility Transistors 50%
• Electron Mobility 50%
• Radio Frequency Measurement 50%
• Microwave 50%

Material Science

• Finite Element Methods 100%
• Electron Mobility 50%