High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN

JM Hayes, M Kuball, A Bell, I Harrison, D Korakakis, CT Foxon

Research output: Contribution to journal › Article (Academic Journal) › peer-review

46 Citations (Scopus)

Translated title of the contribution	High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN
Original language	English
Pages (from-to)	2097 - 2099
Journal	Applied Physics Letters
Volume	75
Publication status	Published - 1999

Structured keywords

@article{3f8cf852ce024339bb1baa5fc11573df,

title = "High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN",

author = "JM Hayes and M Kuball and A Bell and I Harrison and D Korakakis and CT Foxon",

year = "1999",

language = "English",

volume = "75",

pages = "2097 -- 2099",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

}