High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN

JM Hayes, M Kuball, A Bell, I Harrison, D Korakakis, CT Foxon

Research output: Contribution to journalArticle (Academic Journal)

43 Citations (Scopus)
Translated title of the contributionHigh-temperature processing of GaN: the influence of the annealing ambient on strain in GaN
Original languageEnglish
Pages (from-to)2097 - 2099
JournalApplied Physics Letters
Volume75
Publication statusPublished - 1999

Structured keywords

  • CDTR

Cite this

Hayes, JM., Kuball, M., Bell, A., Harrison, I., Korakakis, D., & Foxon, CT. (1999). High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN. Applied Physics Letters, 75, 2097 - 2099.