High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN

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Translated title of the contribution	High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN
Original language	English
Pages (from-to)	2097 - 2099
Journal	Applied Physics Letters
Volume	75
Publication status	Published - 1999

Research Groups and Themes

@article{3f8cf852ce024339bb1baa5fc11573df,

title = "High-temperature processing of GaN: the influence of the annealing ambient on strain in GaN",

author = "JM Hayes and M Kuball and A Bell and I Harrison and D Korakakis and CT Foxon",

year = "1999",

language = "English",

volume = "75",

pages = "2097 -- 2099",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}