Hollow core dislocations in Mg-doped AlGaN

D Cherns; YQ Wang; R Liu; FA Ponce; H Amano; I Akasaki

Hollow core dislocations in Mg-doped AlGaN

D Cherns, YQ Wang, R Liu, FA Ponce, H Amano, I Akasaki

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.

Translated title of the contribution	Hollow core dislocations in Mg-doped AlGaN
Original language	English
Pages (from-to)	609 - 614
Journal	Material Research Society Symposium Proceedings
Volume	743
Issue number	Symposium L – GaN and Related Alloys
Publication status	Published - 2003

Bibliographical note

Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y
ISBN: 155899680X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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title = "Hollow core dislocations in Mg-doped AlGaN",

abstract = "Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.",

author = "D Cherns and YQ Wang and R Liu and FA Ponce and H Amano and I Akasaki",

note = "Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y ISBN: 155899680X Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston Conference Organiser: Materials Research Society",

year = "2003",

language = "English",

volume = "743",

pages = "609 -- 614",

journal = "Material Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

number = "Symposium L – GaN and Related Alloys",

}

TY - JOUR

T1 - Hollow core dislocations in Mg-doped AlGaN

AU - Cherns, D

AU - Wang, YQ

AU - Liu, R

AU - Ponce, FA

AU - Amano, H

AU - Akasaki, I

N1 - Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y ISBN: 155899680X Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston Conference Organiser: Materials Research Society

PY - 2003

Y1 - 2003

N2 - Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.

AB - Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.

M3 - Article (Academic Journal)

SN - 0272-9172

VL - 743

SP - 609

EP - 614

JO - Material Research Society Symposium Proceedings

JF - Material Research Society Symposium Proceedings

IS - Symposium L – GaN and Related Alloys

ER -

Hollow core dislocations in Mg-doped AlGaN

Abstract

Bibliographical note

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