Hollow core dislocations in Mg-doped AlGaN

D Cherns, YQ Wang, R Liu, FA Ponce, H Amano, I Akasaki

Research output: Contribution to journalArticle (Academic Journal)

Abstract

Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (10(20) cm(-3)) Al0.03Ga0.97N films grown on (000 1) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1-5nm. The mechanism of hollow core formation and the role of Mg are discussed.
Translated title of the contributionHollow core dislocations in Mg-doped AlGaN
Original languageEnglish
Pages (from-to)609 - 614
JournalMaterial Research Society Symposium Proceedings
Volume743
Issue numberSymposium L – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y
ISBN: 155899680X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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  • Cite this

    Cherns, D., Wang, YQ., Liu, R., Ponce, FA., Amano, H., & Akasaki, I. (2003). Hollow core dislocations in Mg-doped AlGaN. Material Research Society Symposium Proceedings, 743(Symposium L – GaN and Related Alloys), 609 - 614.