Hot-Electron Electroluminescence under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

Tommaso Brazzini, Michael A. Casbon, Michael J. Uren, Paul J. Tasker, Helmut Jung, Herve Blanck, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

4 Citations (Scopus)
477 Downloads (Pure)

Abstract

Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes. From the results obtained, class A results, on average, in the highest hot-electron concentration, while class F is the mode with the lowest concentration due to its 'L'-shaped load line. The electron temperature extracted from the electroluminescence spectra is reduced with increasing RF power, reflecting the dominance of electroluminescence from the portion of the load line in the semi-on region. The electroluminescence method is not able to give substantial information on the portion of the load line with high field and low current density which will be responsible for the potentially damaging hottest electrons present in the channel.

Original languageEnglish
Article number7895193
Pages (from-to)2155-2160
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number5
Early online date19 Apr 2017
DOIs
Publication statusPublished - 1 May 2017

Structured keywords

  • CDTR

Keywords

  • AlGaN/GaN
  • class A
  • class B
  • class F
  • electroluminescence (EL)
  • electron temperature
  • hot-electrons
  • microwave field-effect transistor (FET)
  • radio frequency (RF) degradation

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