Hot-Electron Electroluminescence under RF Operation in GaN-HEMTs:: A Comparison Among Operational Classes

Tommaso Brazzini; Michael A. Casbon; Michael J. Uren; Paul J. Tasker; Helmut Jung; Herve Blanck; Martin Kuball

doi:10.1109/TED.2017.2686782

Hot-Electron Electroluminescence under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

Tommaso Brazzini, Michael A. Casbon, Michael J. Uren, Paul J. Tasker, Helmut Jung, Herve Blanck, Martin Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

6 Citations (Scopus)

526 Downloads (Pure)

Abstract

Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes. From the results obtained, class A results, on average, in the highest hot-electron concentration, while class F is the mode with the lowest concentration due to its 'L'-shaped load line. The electron temperature extracted from the electroluminescence spectra is reduced with increasing RF power, reflecting the dominance of electroluminescence from the portion of the load line in the semi-on region. The electroluminescence method is not able to give substantial information on the portion of the load line with high field and low current density which will be responsible for the potentially damaging hottest electrons present in the channel.

Original language	English
Article number	7895193
Pages (from-to)	2155-2160
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	5
Early online date	19 Apr 2017
DOIs	https://doi.org/10.1109/TED.2017.2686782
Publication status	Published - 1 May 2017

Structured keywords

CDTR

Keywords

AlGaN/GaN
class A
class B
class F
electroluminescence (EL)
electron temperature
hot-electrons
microwave field-effect transistor (FET)
radio frequency (RF) degradation

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10.1109/TED.2017.2686782

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@article{3734d69ce62442ec8d124039ca627993,

title = "Hot-Electron Electroluminescence under RF Operation in GaN-HEMTs:: A Comparison Among Operational Classes",

abstract = "Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes. From the results obtained, class A results, on average, in the highest hot-electron concentration, while class F is the mode with the lowest concentration due to its 'L'-shaped load line. The electron temperature extracted from the electroluminescence spectra is reduced with increasing RF power, reflecting the dominance of electroluminescence from the portion of the load line in the semi-on region. The electroluminescence method is not able to give substantial information on the portion of the load line with high field and low current density which will be responsible for the potentially damaging hottest electrons present in the channel.",

keywords = "AlGaN/GaN, class A, class B, class F, electroluminescence (EL), electron temperature, hot-electrons, microwave field-effect transistor (FET), radio frequency (RF) degradation",

author = "Tommaso Brazzini and Casbon, {Michael A.} and Uren, {Michael J.} and Tasker, {Paul J.} and Helmut Jung and Herve Blanck and Martin Kuball",

year = "2017",

month = may,

day = "1",

doi = "10.1109/TED.2017.2686782",

language = "English",

volume = "64",

pages = "2155--2160",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Hot-Electron Electroluminescence under RF Operation in GaN-HEMTs:

T2 - A Comparison Among Operational Classes

AU - Brazzini, Tommaso

AU - Casbon, Michael A.

AU - Uren, Michael J.

AU - Tasker, Paul J.

AU - Jung, Helmut

AU - Blanck, Herve

AU - Kuball, Martin

PY - 2017/5/1

Y1 - 2017/5/1

N2 - Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes. From the results obtained, class A results, on average, in the highest hot-electron concentration, while class F is the mode with the lowest concentration due to its 'L'-shaped load line. The electron temperature extracted from the electroluminescence spectra is reduced with increasing RF power, reflecting the dominance of electroluminescence from the portion of the load line in the semi-on region. The electroluminescence method is not able to give substantial information on the portion of the load line with high field and low current density which will be responsible for the potentially damaging hottest electrons present in the channel.

AB - Electroluminescence microscopy and spectroscopy are used to compare the average hot-electron concentration and temperature under radio frequency (RF) operation class A, class B, and class F modes. From the results obtained, class A results, on average, in the highest hot-electron concentration, while class F is the mode with the lowest concentration due to its 'L'-shaped load line. The electron temperature extracted from the electroluminescence spectra is reduced with increasing RF power, reflecting the dominance of electroluminescence from the portion of the load line in the semi-on region. The electroluminescence method is not able to give substantial information on the portion of the load line with high field and low current density which will be responsible for the potentially damaging hottest electrons present in the channel.

KW - AlGaN/GaN

KW - class A

KW - class B

KW - class F

KW - electroluminescence (EL)

KW - electron temperature

KW - hot-electrons

KW - microwave field-effect transistor (FET)

KW - radio frequency (RF) degradation

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U2 - 10.1109/TED.2017.2686782

DO - 10.1109/TED.2017.2686782

M3 - Article (Academic Journal)

AN - SCOPUS:85018475924

VL - 64

SP - 2155

EP - 2160

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

M1 - 7895193

ER -