Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

Akhil Kumar Shaji; Michael J Uren; James W Pomeroy; Matthew D Smith; Shamima Afroz; Timothy Vasen; Martin H H Kuball

doi:10.1109/LED.2023.3311897

Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

Akhil Kumar Shaji^*, Michael J Uren, James W Pomeroy, Matthew D Smith, Shamima Afroz, Timothy Vasen, Martin H H Kuball

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Hot electron effects have been studied in multichannel AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET). Current-Voltage (I-V) and simulations could identify channel position-dependent impact ionization within the device fins. Electroluminescence (EL) emission is observed simultaneously with the impact ionization, whose spectral analysis shows the signature of hot electron scattering (Bremsstrahlung radiation) and not electron-hole recombination.

Original language	English
Pages (from-to)	1821 - 1824
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	11
DOIs	https://doi.org/10.1109/LED.2023.3311897
Publication status	Published - 4 Sept 2023

Research Groups and Themes

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Keywords

Bremsstrahlung
hot electrons
impact ionization
SLCFET

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10.1109/LED.2023.3311897

Kumar et al_2023_Accepted manuscript_Hot electron-induced Bremsstrahlung emission in AlGaNGaN Superlattice Castellated Field Effect Transistors
This is the accepted author manuscript (AAM). The final published version (Version of Record) can be found on the publisher's website. The copyright of any third-party content, such as images, remains with the copyright holder.
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@article{02c1bf3a4300441785cc4f9ab38a9e1b,

title = "Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors",

abstract = "Hot electron effects have been studied in multichannel AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET). Current-Voltage (I-V) and simulations could identify channel position-dependent impact ionization within the device fins. Electroluminescence (EL) emission is observed simultaneously with the impact ionization, whose spectral analysis shows the signature of hot electron scattering (Bremsstrahlung radiation) and not electron-hole recombination.",

keywords = "Bremsstrahlung, hot electrons, impact ionization, SLCFET",

author = "Shaji, {Akhil Kumar} and Uren, {Michael J} and Pomeroy, {James W} and Smith, {Matthew D} and Shamima Afroz and Timothy Vasen and Kuball, {Martin H H}",

year = "2023",

month = sep,

day = "4",

doi = "10.1109/LED.2023.3311897",

language = "English",

volume = "44",

pages = "1821 -- 1824",

journal = "IEEE Electron Device Letters",

issn = "1558-0563",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "11",

}

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T1 - Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

AU - Shaji, Akhil Kumar

AU - Uren, Michael J

AU - Pomeroy, James W

AU - Smith, Matthew D

AU - Afroz, Shamima

AU - Vasen, Timothy

AU - Kuball, Martin H H

PY - 2023/9/4

Y1 - 2023/9/4

N2 - Hot electron effects have been studied in multichannel AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET). Current-Voltage (I-V) and simulations could identify channel position-dependent impact ionization within the device fins. Electroluminescence (EL) emission is observed simultaneously with the impact ionization, whose spectral analysis shows the signature of hot electron scattering (Bremsstrahlung radiation) and not electron-hole recombination.

AB - Hot electron effects have been studied in multichannel AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET). Current-Voltage (I-V) and simulations could identify channel position-dependent impact ionization within the device fins. Electroluminescence (EL) emission is observed simultaneously with the impact ionization, whose spectral analysis shows the signature of hot electron scattering (Bremsstrahlung radiation) and not electron-hole recombination.

KW - Bremsstrahlung

KW - hot electrons

KW - impact ionization

KW - SLCFET

U2 - 10.1109/LED.2023.3311897

DO - 10.1109/LED.2023.3311897

M3 - Article (Academic Journal)

SN - 1558-0563

VL - 44

SP - 1821

EP - 1824

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

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