Hot electron relaxation effects due to electron-electron interaction

JM Rorison, DC Herbert

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

Recent experiments on hot electron spectrometers in n doped GaAs have produced pathlengths in the range 300 to 500 Å at 77 K for hot electron decay. The scattering has been attributed to electron-electron and electron-phonon interaction. The authors have made a detailed theoretical study of these effects in GaAs in the doping range n=1017/1018 cm-3 where polar LO phonon and plasmon mode mixing effects are expected to be greatest. Dispersion in the initial unmixed plasmon mode, mode mixing effects causing altered dispersion and dynamical screening by the electrons and phonons are all found to influence the damping of hot electrons. In particular for the plasmon frequency
Translated title of the contributionHot electron relaxation effects due to electron-electron interaction
Original languageEnglish
Title of host publication18th International Conference on the Physics of Semiconductors, Singapore
PublisherWorld Scientific Publishing Co.
Pages1307 - 1310
Number of pages4
Volume2
Publication statusPublished - 11 Aug 1986

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