Abstract
Recent experiments on hot electron spectrometers in n doped GaAs have produced pathlengths in the range 300 to 500 Å at 77 K for hot electron decay. The scattering has been attributed to electron-electron and electron-phonon interaction. The authors have made a detailed theoretical study of these effects in GaAs in the doping range n=1017/1018 cm-3 where polar LO phonon and plasmon mode mixing effects are expected to be greatest. Dispersion in the initial unmixed plasmon mode, mode mixing effects causing altered dispersion and dynamical screening by the electrons and phonons are all found to influence the damping of hot electrons. In particular for the plasmon frequency
| Translated title of the contribution | Hot electron relaxation effects due to electron-electron interaction |
|---|---|
| Original language | English |
| Title of host publication | 18th International Conference on the Physics of Semiconductors, Singapore |
| Publisher | World Scientific Publishing Co. |
| Pages | 1307 - 1310 |
| Number of pages | 4 |
| Volume | 2 |
| Publication status | Published - 11 Aug 1986 |
Research Groups and Themes
- Photonics and Quantum