Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

Mohammad H. Hedayati, Pallavi Bharadwaj, Vinod John

Research output: Contribution to conferenceConference Paper

1 Citation (Scopus)

Abstract

Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

Original languageEnglish
Pages1-6
Number of pages6
DOIs
Publication statusPublished - 27 Apr 2017
Event2016 IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2016 - Trivandrum, Kerala, India
Duration: 14 Dec 201617 Dec 2016

Conference

Conference2016 IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2016
CountryIndia
CityTrivandrum, Kerala
Period14/12/1617/12/16

Keywords

  • DC-DC power converters
  • GaN power FETs
  • Si
  • Synchronous operation

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  • Cite this

    Hedayati, M. H., Bharadwaj, P., & John, V. (2017). Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. 1-6. Paper presented at 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2016, Trivandrum, Kerala, India. https://doi.org/10.1109/PEDES.2016.7914444