IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Niall F Oswald, BH Stark, JN McNeill

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

6 Citations (Scopus)

Abstract

A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.
Translated title of the contributionIGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses
Original languageEnglish
Title of host publicationIET Power Electronics, Machines and Drives Conference 2012, University of Bristol
Number of pages6
ISBN (Electronic)978-1-84919-616-1
DOIs
Publication statusPublished - 27 Mar 2012

Bibliographical note

Conference Proceedings/Title of Journal: PEMD 2012
Conference Organiser: IET

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