A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.
|Translated title of the contribution||IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses|
|Title of host publication||IET Power Electronics, Machines and Drives Conference 2012, University of Bristol|
|Number of pages||6|
|Publication status||Published - 27 Mar 2012|
Bibliographical noteConference Proceedings/Title of Journal: PEMD 2012
Conference Organiser: IET