IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Niall F Oswald; BH Stark; JN McNeill

doi:10.1049/cp.2012.0207

IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Niall F Oswald
, BH Stark
, JN McNeill

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

10 Citations (Scopus)

Abstract

A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.

Translated title of the contribution	IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses
Original language	English
Title of host publication	IET Power Electronics, Machines and Drives Conference 2012, University of Bristol
Number of pages	6
ISBN (Electronic)	978-1-84919-616-1
DOIs	https://doi.org/10.1049/cp.2012.0207
Publication status	Published - 27 Mar 2012

Bibliographical note

Conference Proceedings/Title of Journal: PEMD 2012
Conference Organiser: IET

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10.1049/cp.2012.0207

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6242057

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@inproceedings{71f7ea9461f24a238356a19f05963f54,

title = "IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses",

abstract = "A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.",

author = "Oswald, \{Niall F\} and BH Stark and JN McNeill",

note = "Conference Proceedings/Title of Journal: PEMD 2012 Conference Organiser: IET",

year = "2012",

month = mar,

day = "27",

doi = "10.1049/cp.2012.0207",

language = "English",

booktitle = "IET Power Electronics, Machines and Drives Conference 2012, University of Bristol",

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IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses. / Oswald, Niall F; Stark, BH; McNeill, JN.
IET Power Electronics, Machines and Drives Conference 2012, University of Bristol. 2012.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

AU - Oswald, Niall F

AU - Stark, BH

AU - McNeill, JN

N1 - Conference Proceedings/Title of Journal: PEMD 2012 Conference Organiser: IET

PY - 2012/3/27

Y1 - 2012/3/27

N2 - A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.

AB - A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.

U2 - 10.1049/cp.2012.0207

DO - 10.1049/cp.2012.0207

M3 - Conference Contribution (Conference Proceeding)

BT - IET Power Electronics, Machines and Drives Conference 2012, University of Bristol

ER -

IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Abstract

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