Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

N. Killat, M. J. Uren, S. Keller, S. Kolluri, U. K. Mishra, M. Kuball

Research output: Contribution to journalArticle (Academic Journal)

8 Citations (Scopus)

Abstract

The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

Original languageEnglish
Article number063506
JournalApplied Physics Letters
Volume105
Issue number6
DOIs
Publication statusPublished - 11 Aug 2014

Fingerprint Dive into the research topics of 'Impact ionization in N-polar AlGaN/GaN high electron mobility transistors'. Together they form a unique fingerprint.

  • Cite this