Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

I. Chatterjee, M. J. Uren, A. Pooth, S. Karboyan, S. Martin-Horcajo, M. Kuball, K. B. Lee, Z. Zaidi, P. A. Houston, D. J. Wallis, I. Guiney, C. J. Humphreys

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

4 Citations (Scopus)
295 Downloads (Pure)

Abstract

Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.

Original languageEnglish
Title of host publication2016 IEEE International Reliability Physics Symposium (IRPS 2016)
Subtitle of host publicationProceedings of a meeting held 17-21 April 2016, Pasadena, California, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages4A41-4A45
ISBN (Electronic)9781467391368
ISBN (Print)9781467391382
DOIs
Publication statusPublished - Oct 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 17 Apr 201621 Apr 2016

Publication series

NameProceedings of the IEEE International Reliability Physics Symposium (IRPS)
PublisherInstitute of Electrical and Electronics Engineers
ISSN (Print)1938-1891

Conference

Conference2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States
CityPasadena
Period17/04/1621/04/16

Structured keywords

  • CDTR

Keywords

  • current collapse
  • dynamic R
  • Field effect transistors
  • HEMTs
  • microwave transistors
  • power transistors

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