Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

I. Chatterjee; M. J. Uren; A. Pooth; S. Karboyan; S. Martin-Horcajo; M. Kuball; K. B. Lee; Z. Zaidi; P. A. Houston; D. J. Wallis; I. Guiney; C. J. Humphreys

doi:10.1109/IRPS.2016.7574529

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

I. Chatterjee, M. J. Uren, A. Pooth, S. Karboyan, S. Martin-Horcajo, M. Kuball, K. B. Lee, Z. Zaidi, P. A. Houston, D. J. Wallis, I. Guiney, C. J. Humphreys

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.

Original language	English
Title of host publication	2016 IEEE International Reliability Physics Symposium (IRPS 2016)
Subtitle of host publication	Proceedings of a meeting held 17-21 April 2016, Pasadena, California, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	4A41-4A45
ISBN (Electronic)	9781467391368
ISBN (Print)	9781467391382
DOIs	https://doi.org/10.1109/IRPS.2016.7574529
Publication status	Published - Oct 2016
Event	2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States Duration: 17 Apr 2016 → 21 Apr 2016

Publication series

Name	Proceedings of the IEEE International Reliability Physics Symposium (IRPS)
Publisher	Institute of Electrical and Electronics Engineers
ISSN (Print)	1938-1891

Conference

Conference	2016 International Reliability Physics Symposium, IRPS 2016
Country/Territory	United States
City	Pasadena
Period	17/04/16 → 21/04/16

Structured keywords

CDTR

Keywords

current collapse
dynamic R
Field effect transistors
HEMTs
microwave transistors
power transistors

Access to Document

10.1109/IRPS.2016.7574529

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Chatterjee, I., Uren, M. J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K. B., Zaidi, Z., Houston, P. A., Wallis, D. J., Guiney, I., & Humphreys, C. J. (2016). Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. In 2016 IEEE International Reliability Physics Symposium (IRPS 2016): Proceedings of a meeting held 17-21 April 2016, Pasadena, California, USA (pp. 4A41-4A45). [7574529] (Proceedings of the IEEE International Reliability Physics Symposium (IRPS)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IRPS.2016.7574529

Chatterjee, I. ; Uren, M. J. ; Pooth, A. et al. / Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. 2016 IEEE International Reliability Physics Symposium (IRPS 2016): Proceedings of a meeting held 17-21 April 2016, Pasadena, California, USA. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 4A41-4A45 (Proceedings of the IEEE International Reliability Physics Symposium (IRPS)).

@inproceedings{6492cf2fe112487d87114e6a2b2ac8b5,

title = "Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs",

abstract = "Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.",

keywords = "current collapse, dynamic R, Field effect transistors, HEMTs, microwave transistors, power transistors",

author = "I. Chatterjee and Uren, {M. J.} and A. Pooth and S. Karboyan and S. Martin-Horcajo and M. Kuball and Lee, {K. B.} and Z. Zaidi and Houston, {P. A.} and Wallis, {D. J.} and I. Guiney and Humphreys, {C. J.}",

year = "2016",

month = oct,

doi = "10.1109/IRPS.2016.7574529",

language = "English",

isbn = "9781467391382",

series = "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "4A41--4A45",

booktitle = "2016 IEEE International Reliability Physics Symposium (IRPS 2016)",

address = "United States",

note = "2016 International Reliability Physics Symposium, IRPS 2016 ; Conference date: 17-04-2016 Through 21-04-2016",

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Chatterjee, I, Uren, MJ, Pooth, A, Karboyan, S, Martin-Horcajo, S, Kuball, M, Lee, KB, Zaidi, Z, Houston, PA, Wallis, DJ, Guiney, I & Humphreys, CJ 2016, Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. in 2016 IEEE International Reliability Physics Symposium (IRPS 2016): Proceedings of a meeting held 17-21 April 2016, Pasadena, California, USA., 7574529, Proceedings of the IEEE International Reliability Physics Symposium (IRPS), Institute of Electrical and Electronics Engineers (IEEE), pp. 4A41-4A45, 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, United States, 17/04/16. https://doi.org/10.1109/IRPS.2016.7574529

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. / Chatterjee, I.; Uren, M. J.; Pooth, A. et al.
2016 IEEE International Reliability Physics Symposium (IRPS 2016): Proceedings of a meeting held 17-21 April 2016, Pasadena, California, USA. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 4A41-4A45 7574529 (Proceedings of the IEEE International Reliability Physics Symposium (IRPS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

AU - Chatterjee, I.

AU - Uren, M. J.

AU - Pooth, A.

AU - Karboyan, S.

AU - Martin-Horcajo, S.

AU - Kuball, M.

AU - Lee, K. B.

AU - Zaidi, Z.

AU - Houston, P. A.

AU - Wallis, D. J.

AU - Guiney, I.

AU - Humphreys, C. J.

PY - 2016/10

Y1 - 2016/10

N2 - Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.

AB - Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.

KW - current collapse

KW - dynamic R

KW - Field effect transistors

KW - HEMTs

KW - microwave transistors

KW - power transistors

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AN - SCOPUS:84990914100

SN - 9781467391382

T3 - Proceedings of the IEEE International Reliability Physics Symposium (IRPS)

SP - 4A41-4A45

BT - 2016 IEEE International Reliability Physics Symposium (IRPS 2016)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2016 International Reliability Physics Symposium, IRPS 2016

Y2 - 17 April 2016 through 21 April 2016

ER -

Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M et al. Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. In 2016 IEEE International Reliability Physics Symposium (IRPS 2016): Proceedings of a meeting held 17-21 April 2016, Pasadena, California, USA. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 4A41-4A45. 7574529. (Proceedings of the IEEE International Reliability Physics Symposium (IRPS)). Epub 2016 Sept 26. doi: 10.1109/IRPS.2016.7574529

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

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