Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)

Maire Power, James Pomeroy, Julian Anaya Calvo, Yohei Otoki, Takeshi Tanaka, Jiro Wada, Masaaki Kuzuhara, Wolfgang Jantz, Andrew Souzis, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

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Abstract

In this work, a combination of Raman thermography and finite element thermal modelling was used to examine the thermal conductivities of different buffer layers in four AlGaN/GaN ungated high electron mobility transistors (HEMTs). The parameterisation of the thermal conductivities of iron-doped GaN, carbon-doped GaN and Al0.04Ga0.96N buffer layers gave good agreement in thermal simulations to experimentally-measured GaN temperatures obtained by Raman thermography. This shows the viability of the combined experimental and modelling method used in this work, for the extraction of layer thermal conductivities in complex AlGaN/GaN device heterostructures.
Original languageEnglish
Title of host publicationExtended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece
Pages49-50
Number of pages2
Publication statusPublished - 15 Jun 2014
Event2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014) - Delphi, Greece
Duration: 15 Jun 201420 Jun 2014
Conference number: 38
http://exmatec-wocsdice-2014.iesl.forth.gr/index.html

Conference

Conference2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014)
Abbreviated titleWOCSIDE-EXMATEC
CountryGreece
CityDelphi
Period15/06/1420/06/14
Internet address

Structured keywords

  • CDTR

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