Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)

Maire Power; James Pomeroy; Julian Anaya Calvo; Yohei Otoki; Takeshi Tanaka; Jiro Wada; Masaaki Kuzuhara; Wolfgang Jantz; Andrew Souzis; Martin Kuball

Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)

Maire Power, James Pomeroy, Julian Anaya Calvo, Yohei Otoki, Takeshi Tanaka, Jiro Wada, Masaaki Kuzuhara, Wolfgang Jantz, Andrew Souzis, Martin Kuball

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

In this work, a combination of Raman thermography and finite element thermal modelling was used to examine the thermal conductivities of different buffer layers in four AlGaN/GaN ungated high electron mobility transistors (HEMTs). The parameterisation of the thermal conductivities of iron-doped GaN, carbon-doped GaN and Al0.04Ga0.96N buffer layers gave good agreement in thermal simulations to experimentally-measured GaN temperatures obtained by Raman thermography. This shows the viability of the combined experimental and modelling method used in this work, for the extraction of layer thermal conductivities in complex AlGaN/GaN device heterostructures.

Original language	English
Title of host publication	Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece
Pages	49-50
Number of pages	2
Publication status	Published - 15 Jun 2014
Event	2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014) - Delphi, Greece Duration: 15 Jun 2014 → 20 Jun 2014 Conference number: 38 http://exmatec-wocsdice-2014.iesl.forth.gr/index.html

Conference

Conference	2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014)
Abbreviated title	WOCSIDE-EXMATEC
Country	Greece
City	Delphi
Period	15/06/14 → 20/06/14
Internet address	http://exmatec-wocsdice-2014.iesl.forth.gr/index.html

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@inproceedings{33ce7fd1723c4ed68cd63d432e44d22d,

title = "Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)",

abstract = "In this work, a combination of Raman thermography and finite element thermal modelling was used to examine the thermal conductivities of different buffer layers in four AlGaN/GaN ungated high electron mobility transistors (HEMTs). The parameterisation of the thermal conductivities of iron-doped GaN, carbon-doped GaN and Al0.04Ga0.96N buffer layers gave good agreement in thermal simulations to experimentally-measured GaN temperatures obtained by Raman thermography. This shows the viability of the combined experimental and modelling method used in this work, for the extraction of layer thermal conductivities in complex AlGaN/GaN device heterostructures.",

author = "Maire Power and James Pomeroy and {Anaya Calvo}, Julian and Yohei Otoki and Takeshi Tanaka and Jiro Wada and Masaaki Kuzuhara and Wolfgang Jantz and Andrew Souzis and Martin Kuball",

year = "2014",

month = jun,

day = "15",

language = "English",

pages = "49--50",

booktitle = "Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece",

note = "2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014), WOCSIDE-EXMATEC ; Conference date: 15-06-2014 Through 20-06-2014",

url = "http://exmatec-wocsdice-2014.iesl.forth.gr/index.html",

}

Power, M, Pomeroy, J, Anaya Calvo, J, Otoki, Y, Tanaka, T, Wada, J, Kuzuhara, M, Jantz, W, Souzis, A & Kuball, M 2014, Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs). in Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece. pp. 49-50, 2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014), Delphi, Greece, 15/06/14.

Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs). / Power, Maire; Pomeroy, James; Anaya Calvo, Julian; Otoki, Yohei; Tanaka, Takeshi; Wada, Jiro; Kuzuhara, Masaaki; Jantz, Wolfgang; Souzis, Andrew; Kuball, Martin.

Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece. 2014. p. 49-50.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)

AU - Power, Maire

AU - Pomeroy, James

AU - Anaya Calvo, Julian

AU - Otoki, Yohei

AU - Tanaka, Takeshi

AU - Wada, Jiro

AU - Kuzuhara, Masaaki

AU - Jantz, Wolfgang

AU - Souzis, Andrew

AU - Kuball, Martin

N1 - Conference code: 38

PY - 2014/6/15

Y1 - 2014/6/15

N2 - In this work, a combination of Raman thermography and finite element thermal modelling was used to examine the thermal conductivities of different buffer layers in four AlGaN/GaN ungated high electron mobility transistors (HEMTs). The parameterisation of the thermal conductivities of iron-doped GaN, carbon-doped GaN and Al0.04Ga0.96N buffer layers gave good agreement in thermal simulations to experimentally-measured GaN temperatures obtained by Raman thermography. This shows the viability of the combined experimental and modelling method used in this work, for the extraction of layer thermal conductivities in complex AlGaN/GaN device heterostructures.

AB - In this work, a combination of Raman thermography and finite element thermal modelling was used to examine the thermal conductivities of different buffer layers in four AlGaN/GaN ungated high electron mobility transistors (HEMTs). The parameterisation of the thermal conductivities of iron-doped GaN, carbon-doped GaN and Al0.04Ga0.96N buffer layers gave good agreement in thermal simulations to experimentally-measured GaN temperatures obtained by Raman thermography. This shows the viability of the combined experimental and modelling method used in this work, for the extraction of layer thermal conductivities in complex AlGaN/GaN device heterostructures.

M3 - Conference Contribution (Conference Proceeding)

SP - 49

EP - 50

BT - Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece

T2 - 2014 38th Workshop on Compound Semiconductor Devices and Integrated Circuits & 12th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (WOCSIDE-EXMATEC-2014)

Y2 - 15 June 2014 through 20 June 2014

ER -