Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P Moens, A Banerjee, Michael Uren, M. Meneghini, Serge Karboyan, Indranil Chatterjee, P. Vanmeerbeek, Markus Caesar, C Liu, A Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

47 Citations (Scopus)
470 Downloads (Pure)

Abstract

The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.
Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting (IEDM 2015)
Subtitle of host publicationProceedings of a meeting held 7-9 December 2015, Washington, DC, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages35.2.1-35.2.4
Number of pages4
ISBN (Electronic)9781467398947
ISBN (Print)9781467398954
DOIs
Publication statusPublished - Mar 2016
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 7 Dec 20159 Dec 2015

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

Structured keywords

  • CDTR

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