Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P Moens; A Banerjee; Michael Uren; M. Meneghini; Serge Karboyan; Indranil Chatterjee; P. Vanmeerbeek; Markus Caesar; C Liu; A Salih; E. Zanoni; G. Meneghesso; Martin Kuball; M. Tack

doi:10.1109/IEDM.2015.7409831

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P Moens, A Banerjee, Michael Uren, M. Meneghini, Serge Karboyan, Indranil Chatterjee, P. Vanmeerbeek, Markus Caesar, C Liu, A Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

82 Citations (Scopus)

833 Downloads (Pure)

Abstract

The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting (IEDM 2015)
Subtitle of host publication	Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	35.2.1-35.2.4
Number of pages	4
ISBN (Electronic)	9781467398947
ISBN (Print)	9781467398954
DOIs	https://doi.org/10.1109/IEDM.2015.7409831
Publication status	Published - Mar 2016
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 7 Dec 2015 → 9 Dec 2015

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	7/12/15 → 9/12/15

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10.1109/IEDM.2015.7409831

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Moens, P., Banerjee, A., Uren, M., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Caesar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M., & Tack, M. (2016). Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs. In 2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA (pp. 35.2.1-35.2.4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM.2015.7409831

@inproceedings{f3e6ef963dec475f99b14500089b4498,

title = "Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs",

abstract = "The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.",

author = "P Moens and A Banerjee and Michael Uren and M. Meneghini and Serge Karboyan and Indranil Chatterjee and P. Vanmeerbeek and Markus Caesar and C Liu and A Salih and E. Zanoni and G. Meneghesso and Martin Kuball and M. Tack",

year = "2016",

month = mar,

doi = "10.1109/IEDM.2015.7409831",

language = "English",

isbn = "9781467398954",

pages = "35.2.1--35.2.4",

booktitle = "2015 IEEE International Electron Devices Meeting (IEDM 2015)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

}

Moens, P, Banerjee, A, Uren, M, Meneghini, M, Karboyan, S, Chatterjee, I, Vanmeerbeek, P, Caesar, M, Liu, C, Salih, A, Zanoni, E, Meneghesso, G, Kuball, M & Tack, M 2016, Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs. in 2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA. Institute of Electrical and Electronics Engineers (IEEE), pp. 35.2.1-35.2.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 7/12/15. https://doi.org/10.1109/IEDM.2015.7409831

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs. / Moens, P; Banerjee, A; Uren, Michael et al.
2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 35.2.1-35.2.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

AU - Moens, P

AU - Banerjee, A

AU - Uren, Michael

AU - Meneghini, M.

AU - Karboyan, Serge

AU - Chatterjee, Indranil

AU - Vanmeerbeek, P.

AU - Caesar, Markus

AU - Liu, C

AU - Salih, A

AU - Zanoni, E.

AU - Meneghesso, G.

AU - Kuball, Martin

AU - Tack, M.

PY - 2016/3

Y1 - 2016/3

N2 - The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.

AB - The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.

UR - https://www.scopus.com/pages/publications/84964057591

U2 - 10.1109/IEDM.2015.7409831

DO - 10.1109/IEDM.2015.7409831

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84964057591

SN - 9781467398954

SP - 35.2.1-35.2.4

BT - 2015 IEEE International Electron Devices Meeting (IEDM 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -

Moens P, Banerjee A, Uren M, Meneghini M, Karboyan S, Chatterjee I et al. Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs. In 2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 35.2.1-35.2.4 Epub 2016 Jan 6. doi: 10.1109/IEDM.2015.7409831

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

Abstract

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E2coGaN - Energy Efficient Converters using GaN Power Devices

Silicon Compatible GaN Power Electronics

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Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

Abstract

Conference

Research Groups and Themes

Access to Document

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Other files and links

Fingerprint

Projects

E2coGaN - Energy Efficient Converters using GaN Power Devices

Silicon Compatible GaN Power Electronics

Cite this