Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices

Dong Liu, Daniel Francis, Firooz Faili, Callum Middleton, Julian Anaya, James W. Pomeroy, Daniel J. Twitchen, Martin Kuball*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

27 Citations (Scopus)
281 Downloads (Pure)

Abstract

The impact of seeding of the diamond growth on the microstructural properties of GaN-on-diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning electron microscopy imaging. Microstructural studies revealed that the seeding conditions are a critical parameter to obtain an optimal material, allowing the manufacture of GaN-on-diamond wafers with no microscopic defects and with structural stability under thermal annealing at 825 °C. The use of the right seeding conditions also results in homogeneous thermal properties across four inch GaN-on-diamond wafers, which is of critical importance for their use for ultra-high power microwave electronic devices.

Original languageEnglish
Pages (from-to)57-60
Number of pages4
JournalScripta Materialia
Volume128
Early online date13 Oct 2016
DOIs
Publication statusPublished - Feb 2017

Structured keywords

  • CDTR

Keywords

  • Compound semiconductors
  • Diamond films
  • Microstructure
  • Thermal conductivity

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