Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Yasin Gunaydin; Saeed Jahdi; Xibo Yuan; Juefei Yang; Renze Yu; Bernard H Stark

doi:10.1109/WiPDAEurope55971.2022.9936254

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Yasin Gunaydin, Saeed Jahdi, Xibo Yuan, Juefei Yang, Renze Yu, Bernard H Stark

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

In this digest, the threshold voltage drift of the GaN cascode power modules is analysed in comparison with similarly-rated Silicon power MOSFET modules under a range of electrothermal gate bias stress. The drift is plotted again a range of gate voltage magnitudes, applied for a verity of stress periods to comprehensively understand how the gate of the low-voltage Silicon MOSFET in the cascode structure of the GaN module would perform in comparison with a fully-rated Silicon MOSFET, and how does this impact the performance of the high voltage GaN HEMT device, enabling the cascode structure. The importance of the trapping effects on the threshold voltage instability and its drift is revealed for the two devices, with particular attention to possibility of the turn-around effect in a range of temperatures.

Original language	English
Title of host publication	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Place of Publication	Coventry, United Kingdom
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	6
ISBN (Electronic)	978-1-6654-8814-3
ISBN (Print)	978-1-6654-8815-0
DOIs	https://doi.org/10.1109/WiPDAEurope55971.2022.9936254
Publication status	Published - 8 Nov 2022
Event	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) - Duration: 18 Sept 2022 → 20 Sept 2022

Conference

Conference	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Period	18/09/22 → 20/09/22

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Publisher Copyright:
© 2022 IEEE.

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10.1109/WiPDAEurope55971.2022.9936254

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Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices
Gunaydin, Y. (Author), Jahdi, S. (Supervisor) & Yuan, X. (Supervisor), 3 Oct 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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Gunaydin, Y., Jahdi, S., Yuan, X., Yang, J., Yu, R., & Stark, B. H. (2022). Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/WiPDAEurope55971.2022.9936254

@inproceedings{f0d8cfdad2da4a21b5ba68afe99f293c,

title = "Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules",

abstract = "In this digest, the threshold voltage drift of the GaN cascode power modules is analysed in comparison with similarly-rated Silicon power MOSFET modules under a range of electrothermal gate bias stress. The drift is plotted again a range of gate voltage magnitudes, applied for a verity of stress periods to comprehensively understand how the gate of the low-voltage Silicon MOSFET in the cascode structure of the GaN module would perform in comparison with a fully-rated Silicon MOSFET, and how does this impact the performance of the high voltage GaN HEMT device, enabling the cascode structure. The importance of the trapping effects on the threshold voltage instability and its drift is revealed for the two devices, with particular attention to possibility of the turn-around effect in a range of temperatures.",

author = "Yasin Gunaydin and Saeed Jahdi and Xibo Yuan and Juefei Yang and Renze Yu and Stark, {Bernard H}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) ; Conference date: 18-09-2022 Through 20-09-2022",

year = "2022",

month = nov,

day = "8",

doi = "10.1109/WiPDAEurope55971.2022.9936254",

language = "English",

isbn = "978-1-6654-8815-0",

booktitle = "2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Gunaydin, Y, Jahdi, S, Yuan, X, Yang, J, Yu, R & Stark, BH 2022, Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules. in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22. https://doi.org/10.1109/WiPDAEurope55971.2022.9936254

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules. / Gunaydin, Yasin; Jahdi, Saeed; Yuan, Xibo et al.
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE), 2022.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

AU - Gunaydin, Yasin

AU - Jahdi, Saeed

AU - Yuan, Xibo

AU - Yang, Juefei

AU - Yu, Renze

AU - Stark, Bernard H

PY - 2022/11/8

Y1 - 2022/11/8

N2 - In this digest, the threshold voltage drift of the GaN cascode power modules is analysed in comparison with similarly-rated Silicon power MOSFET modules under a range of electrothermal gate bias stress. The drift is plotted again a range of gate voltage magnitudes, applied for a verity of stress periods to comprehensively understand how the gate of the low-voltage Silicon MOSFET in the cascode structure of the GaN module would perform in comparison with a fully-rated Silicon MOSFET, and how does this impact the performance of the high voltage GaN HEMT device, enabling the cascode structure. The importance of the trapping effects on the threshold voltage instability and its drift is revealed for the two devices, with particular attention to possibility of the turn-around effect in a range of temperatures.

AB - In this digest, the threshold voltage drift of the GaN cascode power modules is analysed in comparison with similarly-rated Silicon power MOSFET modules under a range of electrothermal gate bias stress. The drift is plotted again a range of gate voltage magnitudes, applied for a verity of stress periods to comprehensively understand how the gate of the low-voltage Silicon MOSFET in the cascode structure of the GaN module would perform in comparison with a fully-rated Silicon MOSFET, and how does this impact the performance of the high voltage GaN HEMT device, enabling the cascode structure. The importance of the trapping effects on the threshold voltage instability and its drift is revealed for the two devices, with particular attention to possibility of the turn-around effect in a range of temperatures.

U2 - 10.1109/WiPDAEurope55971.2022.9936254

DO - 10.1109/WiPDAEurope55971.2022.9936254

M3 - Conference Contribution (Conference Proceeding)

SN - 978-1-6654-8815-0

BT - 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Coventry, United Kingdom

T2 - 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

Y2 - 18 September 2022 through 20 September 2022

ER -

Gunaydin Y, Jahdi S, Yuan X, Yang J, Yu R , Stark BH. Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE). 2022 doi: 10.1109/WiPDAEurope55971.2022.9936254

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

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Student theses

Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices

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