Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET

Mohammed Amer Karout; Malik Abdul Haleem; Arkadeep Deb; Craig Fisher; Saeed Jahdi; Olayiwola Alatise; Peter Gammon

doi:10.30420/566541204

Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET

Mohammed Amer Karout^*
, Malik Abdul Haleem
, Arkadeep Deb
, Craig Fisher
, Saeed Jahdi
, Olayiwola Alatise
, Peter Gammon

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

1 Citation (Scopus)

38 Downloads (Pure)

Abstract

In this paper, the body diode degradation of the latest generation Trench and Planar SiC MOSFET is investigated against the gate turn-off voltage. In Trench MOSFETs, when negative gate turn-off voltage is used, experimental measurements reveal significant degradation in the device characteristics. After 96 h of DC current stress on the body diode, the device exhibits a 22.5% increase in on-state resistance, a 4.7% increase in the body diode voltage drop and an increase of over 150 nA in drain-source leakage current. In contrast, when the gate turn-off voltage is maintained at zero during the same stress period, degradation is significantly reduced, with only a ±2% variation in on-state resistance and less than a 2% increase in body diode voltage drop. Meanwhile, in Planar MOSFET, neither negative nor zero gate voltage conditions result in substantial changes in device characteristics, demonstrating the superior bipolar degradation ruggedness of the planar MOSFET compared to the Trench MOSFET.

Original language	English
Title of host publication	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025
Subtitle of host publication	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Place of Publication	Nuremberg
Publisher	VDE Verlag
Pages	1562-1568
Number of pages	7
ISBN (Electronic)	9783800765416
ISBN (Print)	978-3-8007-6541-6
DOIs	https://doi.org/10.30420/566541204
Publication status	Published - 30 Jun 2025
Event	PCIM Europe 2025 - Nuremberg , Germany Duration: 6 May 2025 → 8 May 2025 https://www.imec-int.com/en/events/pcim-europe-2025

Publication series

Name	PCIM Europe Conference Proceedings
ISSN (Electronic)	2191-3358

Conference

Conference	PCIM Europe 2025
Abbreviated title	PCIM 25
Country/Territory	Germany
City	Nuremberg
Period	6/05/25 → 8/05/25
Internet address	https://www.imec-int.com/en/events/pcim-europe-2025

Bibliographical note

Publisher Copyright:
© VDE VERLAG GMBH · Berlin · Offenbach.

Research Groups and Themes

Electrical Energy Management

Keywords

Power Eelctronics

Access to Document

10.30420/566541204

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This is the accepted author manuscript (AAM) of the article which has been made Open Access under the University of Bristol's Scholarly Works Policy. The final published version (Version of Record) can be found on the publisher's website. The copyright of any third-party content, such as images, remains with the copyright holder.
Accepted author manuscript, 1.01 MBLicence: CC BY

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Karout, M. A., Haleem, M. A., Deb, A., Fisher, C., Jahdi, S., Alatise, O., & Gammon, P. (2025). Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET. In International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1562-1568). (PCIM Europe Conference Proceedings). VDE Verlag. https://doi.org/10.30420/566541204

Karout, Mohammed Amer ; Haleem, Malik Abdul ; Deb, Arkadeep et al. / Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg : VDE Verlag, 2025. pp. 1562-1568 (PCIM Europe Conference Proceedings).

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title = "Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET",

abstract = "In this paper, the body diode degradation of the latest generation Trench and Planar SiC MOSFET is investigated against the gate turn-off voltage. In Trench MOSFETs, when negative gate turn-off voltage is used, experimental measurements reveal significant degradation in the device characteristics. After 96 h of DC current stress on the body diode, the device exhibits a 22.5\% increase in on-state resistance, a 4.7\% increase in the body diode voltage drop and an increase of over 150 nA in drain-source leakage current. In contrast, when the gate turn-off voltage is maintained at zero during the same stress period, degradation is significantly reduced, with only a ±2\% variation in on-state resistance and less than a 2\% increase in body diode voltage drop. Meanwhile, in Planar MOSFET, neither negative nor zero gate voltage conditions result in substantial changes in device characteristics, demonstrating the superior bipolar degradation ruggedness of the planar MOSFET compared to the Trench MOSFET.",

keywords = "Power Eelctronics",

author = "Karout, \{Mohammed Amer\} and Haleem, \{Malik Abdul\} and Arkadeep Deb and Craig Fisher and Saeed Jahdi and Olayiwola Alatise and Peter Gammon",

note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH · Berlin · Offenbach.; PCIM Europe 2025, PCIM 25 ; Conference date: 06-05-2025 Through 08-05-2025",

year = "2025",

month = jun,

day = "30",

doi = "10.30420/566541204",

language = "English",

isbn = "978-3-8007-6541-6",

series = "PCIM Europe Conference Proceedings",

publisher = "VDE Verlag",

pages = "1562--1568",

booktitle = "International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025",

url = "https://www.imec-int.com/en/events/pcim-europe-2025",

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Karout, MA, Haleem, MA, Deb, A, Fisher, C, Jahdi, S, Alatise, O & Gammon, P 2025, Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET. in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe Conference Proceedings, VDE Verlag, Nuremberg , pp. 1562-1568, PCIM Europe 2025, Nuremberg , Germany, 6/05/25. https://doi.org/10.30420/566541204

Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET. / Karout, Mohammed Amer; Haleem, Malik Abdul; Deb, Arkadeep et al.
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg : VDE Verlag, 2025. p. 1562-1568 (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET

AU - Karout, Mohammed Amer

AU - Haleem, Malik Abdul

AU - Deb, Arkadeep

AU - Fisher, Craig

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Gammon, Peter

PY - 2025/6/30

Y1 - 2025/6/30

N2 - In this paper, the body diode degradation of the latest generation Trench and Planar SiC MOSFET is investigated against the gate turn-off voltage. In Trench MOSFETs, when negative gate turn-off voltage is used, experimental measurements reveal significant degradation in the device characteristics. After 96 h of DC current stress on the body diode, the device exhibits a 22.5% increase in on-state resistance, a 4.7% increase in the body diode voltage drop and an increase of over 150 nA in drain-source leakage current. In contrast, when the gate turn-off voltage is maintained at zero during the same stress period, degradation is significantly reduced, with only a ±2% variation in on-state resistance and less than a 2% increase in body diode voltage drop. Meanwhile, in Planar MOSFET, neither negative nor zero gate voltage conditions result in substantial changes in device characteristics, demonstrating the superior bipolar degradation ruggedness of the planar MOSFET compared to the Trench MOSFET.

AB - In this paper, the body diode degradation of the latest generation Trench and Planar SiC MOSFET is investigated against the gate turn-off voltage. In Trench MOSFETs, when negative gate turn-off voltage is used, experimental measurements reveal significant degradation in the device characteristics. After 96 h of DC current stress on the body diode, the device exhibits a 22.5% increase in on-state resistance, a 4.7% increase in the body diode voltage drop and an increase of over 150 nA in drain-source leakage current. In contrast, when the gate turn-off voltage is maintained at zero during the same stress period, degradation is significantly reduced, with only a ±2% variation in on-state resistance and less than a 2% increase in body diode voltage drop. Meanwhile, in Planar MOSFET, neither negative nor zero gate voltage conditions result in substantial changes in device characteristics, demonstrating the superior bipolar degradation ruggedness of the planar MOSFET compared to the Trench MOSFET.

KW - Power Eelctronics

U2 - 10.30420/566541204

DO - 10.30420/566541204

M3 - Conference Contribution (Conference Proceeding)

SN - 978-3-8007-6541-6

T3 - PCIM Europe Conference Proceedings

SP - 1562

EP - 1568

BT - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025

PB - VDE Verlag

CY - Nuremberg

T2 - PCIM Europe 2025

Y2 - 6 May 2025 through 8 May 2025

ER -

Karout MA, Haleem MA, Deb A, Fisher C, Jahdi S, Alatise O et al. Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET. In International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg : VDE Verlag. 2025. p. 1562-1568. (PCIM Europe Conference Proceedings). doi: 10.30420/566541204

Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET

Abstract

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