Impact of intrinsic stress in diamond capping layers on the electrical behavior of AlGaN/GaN HEMTs

Ashu Wang, Marko J. Tadjer, Travis J. Anderson, Roland Baranyai, James W. Pomeroy, Tatyana I. Feygelson, Karl D. Hobart, Bradford B. Pate, Fernando Calle, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

26 Citations (Scopus)

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