Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors

This paper presents a comparative analysis of 1200 V Silicon Carbide (SiC) MOSFETs characterized at bare die level and in TO-247 packaging. Static parameters including transconductance (gm), drain leakage current (IDS-OFF), output (IDS-VDS) and transfer characteristics (IDS-VGS), gate threshold voltage (VGS(th)) and on-state resistance (RDS(on)) are examined. Results show that the TO-247 package introduces parasitic resistance/inductance and higher thermal impedance, leading to disrupted gm, though lower leakage IDS-OFF, shifted VGS(th), and elevated RDS(on). The study quantifies the discrepancy between intrinsic die behavior and packaged device performance, underscoring the need to de-embed packaging effects for accurate device modelling and optimization.