Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Will Waller; Mark Gajda; Saurabh Pandey; Johan Donkers; David Calton; Jeroen  Croon; Serge Karboyan; Jan Sonsky; Michael Uren; Martin Kuball

doi:10.1109/TED.2017.2654800

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Will Waller, Mark Gajda, Saurabh Pandey, Johan Donkers, David Calton, Jeroen Croon, Serge Karboyan, Jan Sonsky, Michael Uren, Martin Kuball

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Abstract

Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.

Original language	English
Article number	3
Pages (from-to)	1197-1202
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	3
Early online date	6 Feb 2017
DOIs	https://doi.org/10.1109/TED.2017.2654800
Publication status	Published - Mar 2017

Research Groups and Themes

CDTR

Keywords

AlGaN/GaN
field plate (FP)
High Electron Mobility Transistor (HEMT)
passivation

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10.1109/TED.2017.2654800

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title = "Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates",

abstract = "Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.",

keywords = "AlGaN/GaN, field plate (FP), High Electron Mobility Transistor (HEMT), passivation",

author = "Will Waller and Mark Gajda and Saurabh Pandey and Johan Donkers and David Calton and Jeroen Croon and Serge Karboyan and Jan Sonsky and Michael Uren and Martin Kuball",

year = "2017",

month = mar,

doi = "10.1109/TED.2017.2654800",

language = "English",

volume = "64",

pages = "1197--1202",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

AU - Waller, Will

AU - Gajda, Mark

AU - Pandey, Saurabh

AU - Donkers, Johan

AU - Calton, David

AU - Croon, Jeroen

AU - Karboyan, Serge

AU - Sonsky, Jan

AU - Uren, Michael

AU - Kuball, Martin

PY - 2017/3

Y1 - 2017/3

N2 - Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.

AB - Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.

KW - AlGaN/GaN

KW - field plate (FP)

KW - High Electron Mobility Transistor (HEMT)

KW - passivation

U2 - 10.1109/TED.2017.2654800

DO - 10.1109/TED.2017.2654800

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 64

SP - 1197

EP - 1202

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

M1 - 3

ER -

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

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