Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Will Waller, Mark Gajda, Saurabh Pandey, Johan Donkers, David Calton, Jeroen Croon, Serge Karboyan, Jan Sonsky, Michael Uren, Martin Kuball

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Abstract

Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.
Original languageEnglish
Article number3
Pages (from-to)1197-1202
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number3
Early online date6 Feb 2017
DOIs
Publication statusPublished - Mar 2017

Structured keywords

  • CDTR

Keywords

  • AlGaN/GaN
  • field plate (FP)
  • High Electron Mobility Transistor (HEMT)
  • passivation

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    Waller, W., Gajda, M., Pandey, S., Donkers, J., Calton, D., Croon, J., Karboyan, S., Sonsky, J., Uren, M., & Kuball, M. (2017). Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates. IEEE Transactions on Electron Devices, 64(3), 1197-1202. [3]. https://doi.org/10.1109/TED.2017.2654800