Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs

Mana Hosseinzadehlish; Saeed Jahdi; Chengjun Shen; Xibo Yuan; Ian Laird; Olayiwola Alatise; Jose Ortiz Gonzalez

doi:10.30420/566091206

Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs

Mana Hosseinzadehlish
, Saeed Jahdi^*
, Chengjun Shen
, Xibo Yuan
, Ian Laird
, Olayiwola Alatise
, Jose Ortiz Gonzalez

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

128 Downloads (Pure)

Abstract

In this paper, static characteristics of 800-V, 20-A Silicon and 1.7-KV, 15-A 4H-SiC BJTs have been analyzed through experimental tests at a wide range of temperatures and base stress levels to evaluate the sensitivities of I-V characteristics, base leakage current and on-state resistance of the devices to temperature increase and electrothermal base bias stress. The performance of the devices are demonstrated at maximum collector current of 3 A, various temperature range from 25 deg C to 175 deg C, different base currents and base stress of 1 V, 3 V and 6 V with and without external resistance.

Original language	English
Title of host publication	PCIM Europe 2023
Subtitle of host publication	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Place of Publication	Nuremberg, Germany
Publisher	VDE Verlag
Pages	1483-1491
Number of pages	9
ISBN (Print)	978-3-8007-6091-6
DOIs	https://doi.org/10.30420/566091206
Publication status	Published - 4 Jul 2023

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Analysis of Electrothermal Reliability of Unipolar and Bipolar 4H-SiC Power Transistors
Hosseinzadehlish, M. (Author), Jahdi, S. (Supervisor) & Yuan, X. (Supervisor), 13 May 2025
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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Hosseinzadehlish, M., Jahdi, S., Shen, C., Yuan, X., Laird, I., Alatise, O., & Gonzalez, J. O. (2023). Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs. In PCIM Europe 2023: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1483-1491). VDE Verlag. https://doi.org/10.30420/566091206

Hosseinzadehlish, Mana ; Jahdi, Saeed ; Shen, Chengjun et al. / Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs. PCIM Europe 2023: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg, Germany : VDE Verlag, 2023. pp. 1483-1491

@inproceedings{df3b255700f44534aa90cd763cfeadb2,

title = "Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs",

abstract = "In this paper, static characteristics of 800-V, 20-A Silicon and 1.7-KV, 15-A 4H-SiC BJTs have been analyzed through experimental tests at a wide range of temperatures and base stress levels to evaluate the sensitivities of I-V characteristics, base leakage current and on-state resistance of the devices to temperature increase and electrothermal base bias stress. The performance of the devices are demonstrated at maximum collector current of 3 A, various temperature range from 25 deg C to 175 deg C, different base currents and base stress of 1 V, 3 V and 6 V with and without external resistance.",

author = "Mana Hosseinzadehlish and Saeed Jahdi and Chengjun Shen and Xibo Yuan and Ian Laird and Olayiwola Alatise and Gonzalez, \{Jose Ortiz\}",

year = "2023",

month = jul,

day = "4",

doi = "10.30420/566091206",

language = "English",

isbn = "978-3-8007-6091-6",

pages = "1483--1491",

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publisher = "VDE Verlag",

}

Hosseinzadehlish, M, Jahdi, S, Shen, C, Yuan, X, Laird, I, Alatise, O & Gonzalez, JO 2023, Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs. in PCIM Europe 2023: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag, Nuremberg, Germany, pp. 1483-1491. https://doi.org/10.30420/566091206

Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs. / Hosseinzadehlish, Mana; Jahdi, Saeed; Shen, Chengjun et al.
PCIM Europe 2023: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg, Germany: VDE Verlag, 2023. p. 1483-1491.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs

AU - Hosseinzadehlish, Mana

AU - Jahdi, Saeed

AU - Shen, Chengjun

AU - Yuan, Xibo

AU - Laird, Ian

AU - Alatise, Olayiwola

AU - Gonzalez, Jose Ortiz

PY - 2023/7/4

Y1 - 2023/7/4

N2 - In this paper, static characteristics of 800-V, 20-A Silicon and 1.7-KV, 15-A 4H-SiC BJTs have been analyzed through experimental tests at a wide range of temperatures and base stress levels to evaluate the sensitivities of I-V characteristics, base leakage current and on-state resistance of the devices to temperature increase and electrothermal base bias stress. The performance of the devices are demonstrated at maximum collector current of 3 A, various temperature range from 25 deg C to 175 deg C, different base currents and base stress of 1 V, 3 V and 6 V with and without external resistance.

AB - In this paper, static characteristics of 800-V, 20-A Silicon and 1.7-KV, 15-A 4H-SiC BJTs have been analyzed through experimental tests at a wide range of temperatures and base stress levels to evaluate the sensitivities of I-V characteristics, base leakage current and on-state resistance of the devices to temperature increase and electrothermal base bias stress. The performance of the devices are demonstrated at maximum collector current of 3 A, various temperature range from 25 deg C to 175 deg C, different base currents and base stress of 1 V, 3 V and 6 V with and without external resistance.

U2 - 10.30420/566091206

DO - 10.30420/566091206

M3 - Conference Contribution (Conference Proceeding)

SN - 978-3-8007-6091-6

SP - 1483

EP - 1491

BT - PCIM Europe 2023

PB - VDE Verlag

CY - Nuremberg, Germany

ER -

Hosseinzadehlish M, Jahdi S, Shen C, Yuan X, Laird I, Alatise O et al. Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs. In PCIM Europe 2023: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nuremberg, Germany: VDE Verlag. 2023. p. 1483-1491 doi: 10.30420/566091206

Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs

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Student theses

Analysis of Electrothermal Reliability of Unipolar and Bipolar 4H-SiC Power Transistors

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