This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.
|Title of host publication||The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)|
|Publisher||Institution of Engineering and Technology (IET)|
|Number of pages||6|
|Publication status||Published - 22 Sep 2021|
|Event||10th International Conference on Power Electronics, Machines and Drives, PEMD 2020 - Virtual, Online|
Duration: 15 Dec 2020 → 17 Dec 2020
|Conference||10th International Conference on Power Electronics, Machines and Drives, PEMD 2020|
|Period||15/12/20 → 17/12/20|
Bibliographical noteFunding Information:
The author would like to acknowledge the support of the UK EPSRC grant EP/R004366/1 and EPSRC offshore renewable energy (ORE) Supergen hub for enabling this research.
© PEMD 2020.All right reserved.
- Gallium nitride (GAN)
- Silicon carbide (SIC)