Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation

Yasin Gunaydin; Saeed Jahdi; Olayiwola Alatise; Jose O. Gonzalez; Mohammad Hedayati; Bernard Stark; Juefei Yang; Xibo Yuan; Phil Mellor

doi:10.1049/icp.2021.1067

Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation

Yasin Gunaydin^*, Saeed Jahdi, Olayiwola Alatise, Jose O. Gonzalez, Mohammad Hedayati, Bernard Stark, Juefei Yang, Xibo Yuan, Phil Mellor

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3^rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.

Original language	English
Title of host publication	The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)
Publisher	Institution of Engineering and Technology (IET)
Pages	782-787
Number of pages	6
ISBN (Electronic)	978-1-83953-542-0
DOIs	https://doi.org/10.1049/icp.2021.1067
Publication status	Published - 22 Sept 2021
Event	10th International Conference on Power Electronics, Machines and Drives, PEMD 2020 - Virtual, Online Duration: 15 Dec 2020 → 17 Dec 2020

Conference

Conference	10th International Conference on Power Electronics, Machines and Drives, PEMD 2020
City	Virtual, Online
Period	15/12/20 → 17/12/20

Bibliographical note

Funding Information:
The author would like to acknowledge the support of the UK EPSRC grant EP/R004366/1 and EPSRC offshore renewable energy (ORE) Supergen hub for enabling this research.

Publisher Copyright:
© PEMD 2020.All right reserved.

Keywords

Cascode
Gallium nitride (GAN)
Reliability
Silicon carbide (SIC)
Transients

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10.1049/icp.2021.1067

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Accepted author manuscript, 1.48 MBLicence: Unspecified

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Gunaydin, Y., Jahdi, S., Alatise, O., Gonzalez, J. O., Hedayati, M., Stark, B., Yang, J., Yuan, X., & Mellor, P. (2021). Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation. In The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020) (pp. 782-787). Institution of Engineering and Technology (IET). https://doi.org/10.1049/icp.2021.1067

@inproceedings{89ce33517f294424bddcdbf27ca3443a,

title = "Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation",

abstract = "This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.",

keywords = "Cascode, Gallium nitride (GAN), Reliability, Silicon carbide (SIC), Transients",

author = "Yasin Gunaydin and Saeed Jahdi and Olayiwola Alatise and Gonzalez, {Jose O.} and Mohammad Hedayati and Bernard Stark and Juefei Yang and Xibo Yuan and Phil Mellor",

note = "Funding Information: The author would like to acknowledge the support of the UK EPSRC grant EP/R004366/1 and EPSRC offshore renewable energy (ORE) Supergen hub for enabling this research. Publisher Copyright: {\textcopyright} PEMD 2020.All right reserved.; 10th International Conference on Power Electronics, Machines and Drives, PEMD 2020 ; Conference date: 15-12-2020 Through 17-12-2020",

year = "2021",

month = sep,

day = "22",

doi = "10.1049/icp.2021.1067",

language = "English",

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Gunaydin, Y, Jahdi, S, Alatise, O, Gonzalez, JO, Hedayati, M, Stark, B, Yang, J, Yuan, X & Mellor, P 2021, Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation. in The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020). Institution of Engineering and Technology (IET), pp. 782-787, 10th International Conference on Power Electronics, Machines and Drives, PEMD 2020, Virtual, Online, 15/12/20. https://doi.org/10.1049/icp.2021.1067

Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation. / Gunaydin, Yasin; Jahdi, Saeed; Alatise, Olayiwola et al.
The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020). Institution of Engineering and Technology (IET), 2021. p. 782-787.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices

T2 - 10th International Conference on Power Electronics, Machines and Drives, PEMD 2020

AU - Gunaydin, Yasin

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Gonzalez, Jose O.

AU - Hedayati, Mohammad

AU - Stark, Bernard

AU - Yang, Juefei

AU - Yuan, Xibo

AU - Mellor, Phil

N1 - Funding Information: The author would like to acknowledge the support of the UK EPSRC grant EP/R004366/1 and EPSRC offshore renewable energy (ORE) Supergen hub for enabling this research. Publisher Copyright: © PEMD 2020.All right reserved.

PY - 2021/9/22

Y1 - 2021/9/22

N2 - This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.

AB - This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.

KW - Cascode

KW - Gallium nitride (GAN)

KW - Reliability

KW - Silicon carbide (SIC)

KW - Transients

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U2 - 10.1049/icp.2021.1067

DO - 10.1049/icp.2021.1067

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:85117710878

SP - 782

EP - 787

BT - The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)

PB - Institution of Engineering and Technology (IET)

Y2 - 15 December 2020 through 17 December 2020

ER -

Gunaydin Y, Jahdi S, Alatise O, Gonzalez JO, Hedayati M, Stark B et al. Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation. In The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020). Institution of Engineering and Technology (IET). 2021. p. 782-787 doi: 10.1049/icp.2021.1067

Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation

Abstract

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Bibliographical note

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Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices

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Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation

Abstract

Conference

Bibliographical note

Keywords

Access to Document

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Other files and links

Fingerprint

Student theses

Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices

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