Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC cascode devices: A technology evaluation

Yasin Gunaydin*, Saeed Jahdi, Olayiwola Alatise, Jose O. Gonzalez, Mohammad Hedayati, Bernard Stark, Juefei Yang, Xibo Yuan, Phil Mellor

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

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Abstract

This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.

Original languageEnglish
Title of host publicationThe 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)
PublisherInstitution of Engineering and Technology (IET)
Pages782-787
Number of pages6
ISBN (Electronic)978-1-83953-542-0
DOIs
Publication statusPublished - 22 Sep 2021
Event10th International Conference on Power Electronics, Machines and Drives, PEMD 2020 - Virtual, Online
Duration: 15 Dec 202017 Dec 2020

Conference

Conference10th International Conference on Power Electronics, Machines and Drives, PEMD 2020
CityVirtual, Online
Period15/12/2017/12/20

Bibliographical note

Funding Information:
The author would like to acknowledge the support of the UK EPSRC grant EP/R004366/1 and EPSRC offshore renewable energy (ORE) Supergen hub for enabling this research.

Publisher Copyright:
© PEMD 2020.All right reserved.

Keywords

  • Cascode
  • Gallium nitride (GAN)
  • Reliability
  • Silicon carbide (SIC)
  • Transients

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