In this paper, the properties of crosstalk on SiC planar MOSFET, SiC symmetrical double-trench MOSFET and SiC asymmetrical double-trench MOSFET is investigated on a half-bridge topology, to enable analysis of the impact of temperature, drain-source transition speed and gate resistance on the severity of the shoot-through current and induced gate voltage. The experimental measurements, performed on a wide range of temperatures and switching rates, show that the two selected symmetrical and asymmetrical double-trench MOSFETs exhibit higher induced gate voltage during crosstalk with the same external gate resistance compared with the planar SiC MOSFET, yielding a higher shoot-through current. Therefore, in continuous initiation of intentional crosstalk, the two double-trench MOSFETs experience more temperature rise, especially for symmetrical one which leads the device to verge of failure within minutes while the temperature rise in other two devices is significantly lower. The different trends of shoot-through current with temperature on DUTs reveals that they are dominated by different mechanisms, i.e., influenced by threshold voltage and inversion layer carriers' mobility. A model is developed for prediction of shoot-through current during crosstalk which is validated for the 3 device structures. The comparison of the modelled results with the measurement proves its capability to predict the crosstalk behaviour.
|Title of host publication||IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society|
|Place of Publication||978-1-6654-0256-9|
|Publisher||IEEE Computer Society|
|Number of pages||6|
|Publication status||Published - 13 Oct 2021|
|Event||47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021 - Toronto, Canada|
Duration: 13 Oct 2021 → 16 Oct 2021
|Name||IECON Proceedings (Industrial Electronics Conference)|
|Conference||47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021|
|Period||13/10/21 → 16/10/21|
Bibliographical noteFunding Information:
This work is funded by the UK EPSRC Supergen Energy Networks Hub.
© 2021 IEEE.
- Silicon Carbide