Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation

Huarui Sun, Miguel Montes Bajo, Michael J Uren, Martin H H Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

11 Citations (Scopus)

785 Downloads (Pure)

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Finished
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
Kuball, M. H. H. (Principal Investigator)
8/07/13 → 8/10/16
Project: Research