Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off- and on-state voltage bias stress was studied using UV light-assisted drain current trapping characteristics. Besides electronic traps generated underneath the gate during off- state stress, both stress conditions lead to trap generation in the transistor access region close to the drain side of the gate edge. UV light-assisted trapping analysis strongly indicates these traps to be located in the AlGaN subsurface layer of the AlGaN/GaN HEMT. Trap evolution during off-state stress performed at base plate temperatures from room temperature to 150 degrees C was found to exhibit an activation energy of 0.26 eV, consistent with impurity diffusion along dislocations. (C) 2010 American Institute of Physics.
|Translated title of the contribution||Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress|
|Pages (from-to)||023503 - 023503|
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Jul 2010|