Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

M Tapajna, UK Mishra, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

41 Citations (Scopus)

Abstract

Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off- and on-state voltage bias stress was studied using UV light-assisted drain current trapping characteristics. Besides electronic traps generated underneath the gate during off- state stress, both stress conditions lead to trap generation in the transistor access region close to the drain side of the gate edge. UV light-assisted trapping analysis strongly indicates these traps to be located in the AlGaN subsurface layer of the AlGaN/GaN HEMT. Trap evolution during off-state stress performed at base plate temperatures from room temperature to 150 degrees C was found to exhibit an activation energy of 0.26 eV, consistent with impurity diffusion along dislocations. (C) 2010 American Institute of Physics.
Translated title of the contributionImportance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress
Original languageEnglish
Pages (from-to)023503 - 023503
Number of pages3
JournalApplied Physics Letters
Volume97
DOIs
Publication statusPublished - Jul 2010

Structured keywords

  • CDTR

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