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Improved Auxiliary Triggering Topology for High-Power Nanosecond Pulse Generators Based on Avalanche Transistors

Jiaqi Yan*, Saikang Shen, Guoxiang Sun, Weidong Ding

*Corresponding author for this work

    Research output: Contribution to journalArticle (Academic Journal)peer-review

    34 Citations (Scopus)

    Abstract

    The avalanche transistor-based Marx circuit has great advantages in generating high-voltage nanosecond pulses. The introduction of auxiliary triggering topology (ATT) can reduce the damage probability of transistors in M × N -stage Marx bank circuits (MBCs). However, as the number of modified stages increases, the output voltage drops significantly, which makes it not achievable to adopt ATT at each stage. The transistors in nonmodified stages still have a certain failure rate when operating at a high repetition rate. Moreover, the previous ATT is only applicable in the negative polarity MBC. In this article, an improved ATT is proposed to solve the above problems. First, its operating principle is analyzed, and the feasibility of its application in both negative and positive MBCs is verified by simulations. Then, the effects of the improved ATT on M × N -stage MBCs are experimentally studied, and the results show that the improved ATT can be used in all stages of MBC without reducing the output voltage. It can also reduce the minimum operating voltage of transistors and widen the regulating range of output voltage. In addition, it can improve the synchronous conduction of parallel-connected transistors. Finally, two nanosecond pulse generators with positive and negative polarity, respectively, are developed and used to drive the atmospheric pressure plasma jet. The amplitude of output voltage can be adjusted in the range of 5–10 kV, measuring at the open end of a coaxial cable with 75 Ω impedance, and the maximum repetition rate is up to 7 kHz.
    Original languageEnglish
    Pages (from-to)13634-13644
    Number of pages11
    JournalIEEE Transactions on Power Electronics
    Volume36
    Issue number12
    DOIs
    Publication statusPublished - 9 Jun 2021

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