Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system

N Vogiatzis, JM Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Translated title of the contributionImproved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system
Original languageEnglish
Title of host publicationConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA
Pages1 - 2
Number of pages2
Publication statusPublished - 4 Apr 2008

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