Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system
Original language	English
Title of host publication	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA
Pages	1 - 2
Number of pages	2
Publication status	Published - 4 Apr 2008

Research Groups and Themes

@inproceedings{efbf32d981bb42dbabf4aa1490d96bd4,

title = "Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system",

author = "N Vogiatzis and JM Rorison",

year = "2008",

month = apr,

day = "4",

language = "English",

isbn = "1557528594",

pages = "1 -- 2",

booktitle = "Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA",

}

Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system. / Vogiatzis, N; Rorison, JM.
Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA. 2008. p. 1 - 2.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system

AU - Vogiatzis, N

AU - Rorison, JM

PY - 2008/4/4

Y1 - 2008/4/4

M3 - Conference Contribution (Conference Proceeding)

SN - 1557528594

SP - 1

EP - 2

BT - Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS), San Jose, USA

ER -