Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design

J Das, H Oprins, H Ji, A Sarua, M Kuball, W Ruythooren, J Derluyn, M Germain, G Borghs

Research output: Contribution to journalArticle (Academic Journal)

60 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been studied for their potential application in RF power applications; however, the low thermal conductivity of the sapphire substrate is a major drawback. Aiming at RF system-in-a-package, the authors propose a flip-chip-integration approach, where the generated heat is dissipated to an AlN carrier substrate. Different flip-chip-bump designs are compared, using thermal simulations, electrical measurements, micro-Raman spectroscopy, and infrared thermography. The authors show that a novel bump design, where bumps are placed directly onto both source and drain ohmic contacts, improves the thermal performance of the HEMT
Translated title of the contributionImproved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design
Original languageEnglish
Pages (from-to)2696 - 2702
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume53
DOIs
Publication statusPublished - Nov 2006

Bibliographical note

Publisher: The Institute of Electrical and Electronics Engineers, Inc

Structured keywords

  • CDTR

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