In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

CW Leung*, C Bell, G Burnell, MG Blamire, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

11 Citations (Scopus)

Abstract

We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.

Original languageEnglish
Article numberPII s0957-4484(04)73648-x
Pages (from-to)786-789
Number of pages4
JournalNanotechnology
Volume15
Issue number7
Publication statusPublished - Jul 2004

Keywords

  • PERPENDICULAR GIANT MAGNETORESISTANCES
  • MAGNETIC MULTILAYERS
  • TUNNEL-JUNCTIONS
  • SPIN-VALVE
  • CONTACTS
  • DEVICES

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