In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

CW Leung; C Bell; G Burnell; MG Blamire; Chris Bell

In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

CW Leung^*, C Bell, G Burnell, MG Blamire, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

11 Citations (Scopus)

Abstract

We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.

Original language	English
Article number	PII s0957-4484(04)73648-x
Pages (from-to)	786-789
Number of pages	4
Journal	Nanotechnology
Volume	15
Issue number	7
Publication status	Published - Jul 2004

Keywords

PERPENDICULAR GIANT MAGNETORESISTANCES
MAGNETIC MULTILAYERS
TUNNEL-JUNCTIONS
SPIN-VALVE
CONTACTS
DEVICES

Cite this

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title = "In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy",

abstract = "We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.",

keywords = "PERPENDICULAR GIANT MAGNETORESISTANCES, MAGNETIC MULTILAYERS, TUNNEL-JUNCTIONS, SPIN-VALVE, CONTACTS, DEVICES",

author = "CW Leung and C Bell and G Burnell and MG Blamire and Chris Bell",

year = "2004",

month = jul,

language = "English",

volume = "15",

pages = "786--789",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "7",

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TY - JOUR

T1 - In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

AU - Leung, CW

AU - Bell, C

AU - Burnell, G

AU - Blamire, MG

AU - Bell, Chris

PY - 2004/7

Y1 - 2004/7

N2 - We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.

AB - We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.

KW - PERPENDICULAR GIANT MAGNETORESISTANCES

KW - MAGNETIC MULTILAYERS

KW - TUNNEL-JUNCTIONS

KW - SPIN-VALVE

KW - CONTACTS

KW - DEVICES

M3 - Article (Academic Journal)

VL - 15

SP - 786

EP - 789

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 7

M1 - PII s0957-4484(04)73648-x

ER -