Abstract
We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.
Original language | English |
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Article number | PII s0957-4484(04)73648-x |
Pages (from-to) | 786-789 |
Number of pages | 4 |
Journal | Nanotechnology |
Volume | 15 |
Issue number | 7 |
Publication status | Published - Jul 2004 |
Keywords
- PERPENDICULAR GIANT MAGNETORESISTANCES
- MAGNETIC MULTILAYERS
- TUNNEL-JUNCTIONS
- SPIN-VALVE
- CONTACTS
- DEVICES