We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.
|Article number||PII s0957-4484(04)73648-x|
|Number of pages||4|
|Publication status||Published - Jul 2004|
- PERPENDICULAR GIANT MAGNETORESISTANCES
- MAGNETIC MULTILAYERS