Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography

Fengzai Tang, Tongtong Zhu, Fabrice Oehler, Wai Yuen Fu, James T. Griffiths, Fabien C P Massabuau, Menno J. Kappers, Tomas L. Martin, Paul A J Bagot, Michael P. Moody, Rachel A. Oliver

Research output: Contribution to journalArticle (Academic Journal)peer-review

39 Citations (Scopus)


Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.

Original languageEnglish
Article number072104
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 16 Feb 2015


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