Indium Nitride and Indium Gallium Nitride layers grown on nanorods

Richard F Webster; David Cherns; Lucy E. Goff; Sergei V. Novikov; C. Thomas Foxon; Alec M. Fischer; Fernando A. Ponce

doi:10.1088/1742-6596/471/1/012025

Indium Nitride and Indium Gallium Nitride layers grown on nanorods

Richard F Webster, David Cherns, Lucy E. Goff, Sergei V. Novikov, C. Thomas Foxon, Alec M. Fischer, Fernando A. Ponce

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

Molecular beam epitaxy has been used to grow InN layers on both Si and SiC
substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth
temperatures used

Original language	English
Title of host publication	Journal of Physics: Conference Series
Publisher	IOP Publishing
Number of pages	4
Volume	471
DOIs	https://doi.org/10.1088/1742-6596/471/1/012025
Publication status	Published - Sept 2013

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Solar cells based on InGaN nanostructures
Cherns, D. (Principal Investigator)
1/10/11 → 1/10/14
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@inproceedings{068624d8be074f21af008c2a73227743,

title = "Indium Nitride and Indium Gallium Nitride layers grown on nanorods",

abstract = "Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growthtemperatures used",

author = "Webster, {Richard F} and David Cherns and Goff, {Lucy E.} and Novikov, {Sergei V.} and Foxon, {C. Thomas} and Fischer, {Alec M.} and Ponce, {Fernando A.}",

year = "2013",

month = sep,

doi = "10.1088/1742-6596/471/1/012025",

language = "English",

volume = "471",

booktitle = "Journal of Physics: Conference Series",

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T1 - Indium Nitride and Indium Gallium Nitride layers grown on nanorods

AU - Webster, Richard F

AU - Cherns, David

AU - Goff, Lucy E.

AU - Novikov, Sergei V.

AU - Foxon, C. Thomas

AU - Fischer, Alec M.

AU - Ponce, Fernando A.

PY - 2013/9

Y1 - 2013/9

N2 - Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growthtemperatures used

AB - Molecular beam epitaxy has been used to grow InN layers on both Si and SiCsubstrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growthtemperatures used

U2 - 10.1088/1742-6596/471/1/012025

DO - 10.1088/1742-6596/471/1/012025

M3 - Conference Contribution (Conference Proceeding)

VL - 471

BT - Journal of Physics: Conference Series

PB - IOP Publishing

ER -

Indium Nitride and Indium Gallium Nitride layers grown on nanorods

Abstract

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Solar cells based on InGaN nanostructures

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