Indium Nitride and Indium Gallium Nitride layers grown on nanorods

Richard F Webster, David Cherns, Lucy E. Goff, Sergei V. Novikov, C. Thomas Foxon, Alec M. Fischer, Fernando A. Ponce

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
347 Downloads (Pure)


Molecular beam epitaxy has been used to grow InN layers on both Si and SiC
substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth
temperatures used
Original languageEnglish
Title of host publicationJournal of Physics: Conference Series
PublisherIOP Publishing
Number of pages4
Publication statusPublished - Sept 2013


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