Influence of a lateral electric field on the optical properties of InAs quantum dots

D Reuter, V Stavarache, A D Wieck, M Schwab, R Oulton, M Bayer

Research output: Contribution to journalArticle (Academic Journal)

7 Citations (Scopus)

Abstract

We have performed single dot photoluminescence and time-resolved ensemble photoluminescence measurements on InAs quantum dots embedded in a lateral in-plane p-i-n or n-i-n device, respectively, which makes the application of lateral electric fields, i.e. field direction perpendicular to the growth direction, feasible. Time-resolved measurements show an increase in the radiative lifetime of up to 30% with increasing field. We attribute this to the reduced overlap between the electron and hole wave functions. Single dot spectroscopy revealed a small red-shift of the emission energies of maximum 0.5 meV. This shift can be explained by the quantum confined Stark effect taking into account that the red-shift due to the band-tilting is partly compensated by a decrease in exciton binding energy. (c) 2006 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalPhysica E: Low-dimensional Systems and Nanostructures
Volume32
Issue number1-2
DOIs
Publication statusPublished - May 2006

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