Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique

Y Shi, ZY Xie, LH Liu, B Liu, JH Edgar, MHH Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

34 Citations (Scopus)
Translated title of the contributionInfluence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique
Original languageEnglish
Pages (from-to)177 - 186
JournalJournal of Crystal Growth
Volume233
Publication statusPublished - 2001

Bibliographical note

Publisher: Elsevier Science

Structured keywords

  • CDTR

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