Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique

Y Shi, ZY Xie, LH Liu, B Liu, JH Edgar, MHH Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

37 Citations (Scopus)

Translated title of the contribution	Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique
Original language	English
Pages (from-to)	177 - 186
Journal	Journal of Crystal Growth
Volume	233
Publication status	Published - 2001

Publisher: Elsevier Science

Research Groups and Themes

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title = "Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique",

author = "Y Shi and ZY Xie and LH Liu and B Liu and JH Edgar and MHH Kuball",

note = "Publisher: Elsevier Science",

year = "2001",

language = "English",

volume = "233",

pages = "177 -- 186",

journal = "Journal of Crystal Growth",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique

AU - Shi, Y

AU - Xie, ZY

AU - Liu, LH

AU - Liu, B

AU - Edgar, JH

AU - Kuball, MHH

N1 - Publisher: Elsevier Science

PY - 2001

Y1 - 2001

M3 - Article (Academic Journal)

VL - 233

SP - 177

EP - 186

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -