Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

YN Qiu; JM Rorison; HD Sun; S Calvez; MD Dawson; AC Bryce

doi:10.1063/1.2138350

Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

YN Qiu, JM Rorison, HD Sun, S Calvez, MD Dawson, AC Bryce

Research output: Contribution to journal › Article (Academic Journal) › peer-review

9 Citations (Scopus)

Abstract

We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers

Translated title of the contribution	Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model
Original language	English
Pages (from-to)	231112-1 - 231112-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87 (23)
DOIs	https://doi.org/10.1063/1.2138350
Publication status	Published - Dec 2005

Bibliographical note

Publisher: AIP

Access to Document

10.1063/1.2138350

Cite this

@article{c238702630fb4bd7a967a7ba6398bf9a,

title = "Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model",

abstract = "We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers",

author = "YN Qiu and JM Rorison and HD Sun and S Calvez and MD Dawson and AC Bryce",

note = "Publisher: AIP",

year = "2005",

month = dec,

doi = "10.1063/1.2138350",

language = "English",

volume = "87 (23)",

pages = "231112--1 -- 231112--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

AU - Qiu, YN

AU - Rorison, JM

AU - Sun, HD

AU - Calvez, S

AU - Dawson, MD

AU - Bryce, AC

N1 - Publisher: AIP

PY - 2005/12

Y1 - 2005/12

N2 - We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers

AB - We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers

U2 - 10.1063/1.2138350

DO - 10.1063/1.2138350

M3 - Article (Academic Journal)

VL - 87 (23)

SP - 231112-1 - 231112-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

Abstract

Bibliographical note

Access to Document

Fingerprint

Cite this