Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

JCL Yong; JM Rorison; IH White

doi:10.1063/1.1390482

Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

JCL Yong, JM Rorison, IH White

Department of Electrical & Electronic Engineering

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12 Citations (Scopus)

Abstract

The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications

Translated title of the contribution	Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers
Original language	English
Pages (from-to)	1085 - 1087
Number of pages	3
Journal	Applied Physics Letters
Volume	79 (8)
DOIs	https://doi.org/10.1063/1.1390482
Publication status	Published - Aug 2001

Bibliographical note

Publisher: AIP

Research Groups and Themes

Photonics and Quantum

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title = "Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers",

abstract = "The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications",

author = "JCL Yong and JM Rorison and IH White",

note = "Publisher: AIP",

year = "2001",

month = aug,

doi = "10.1063/1.1390482",

language = "English",

volume = "79 (8)",

pages = "1085 -- 1087",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

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T1 - Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

AU - Yong, JCL

AU - Rorison, JM

AU - White, IH

N1 - Publisher: AIP

PY - 2001/8

Y1 - 2001/8

N2 - The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications

AB - The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications

U2 - 10.1063/1.1390482

DO - 10.1063/1.1390482

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 79 (8)

SP - 1085

EP - 1087

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

Abstract

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