Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

JCL Yong, JM Rorison, IH White

Research output: Contribution to journalArticle (Academic Journal)

12 Citations (Scopus)

Abstract

The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications
Translated title of the contributionInfluence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers
Original languageEnglish
Pages (from-to)1085 - 1087
Number of pages3
JournalApplied Physics Letters
Volume79 (8)
DOIs
Publication statusPublished - Aug 2001

Bibliographical note

Publisher: AIP

Fingerprint Dive into the research topics of 'Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers'. Together they form a unique fingerprint.

Cite this