Influence of microstructural defects on the thermal conductivity of GaN: A molecular dynamics study

David Spiteri*, James W. Pomeroy, Martin Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

7 Citations (Scopus)

Abstract

The lattice thermal conductivity is known to depend on crystal quality, but the reduction in thermal conductivity due to specific defects is presently unclear. Molecular dynamics simulations were used to investigate the impact of microstructural defects on the thermal conductivity of gallium nitride. The conductivity of a finite crystal was reduced to (39 +/- 4)% by a screw dislocation density of 2.0x10(13)cm(-2) and to (51 +/- 4)% by an edge dislocation of similar density, illustrating that the type of dislocation is important for thermal conductivity. The effect of stacking faults on thermal conductivity was also investigated.

Original languageEnglish
Pages (from-to)1541-1545
Number of pages5
Journalphysica status solidi (b)
Volume250
Issue number8
DOIs
Publication statusPublished - Aug 2013

Structured keywords

  • CDTR

Keywords

  • crystal defects
  • GaN
  • molecular dynamics
  • thermal conductivity
  • ALGAN/GAN ELECTRONIC DEVICES
  • BOUNDARY RESISTANCE
  • NUCLEATION LAYERS
  • DISLOCATIONS
  • MICROSCOPY
  • ORDER

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