Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime

Edmund Harbord; S. Iwamoto; Y. Arakawa; P. Spencer; E. Clarke; R. Murray

doi:10.1063/1.4765349

Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime

Edmund Harbord^*, S. Iwamoto, Y. Arakawa, P. Spencer, E. Clarke, R. Murray

^*Corresponding author for this work

QET Labs

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

The radiative lifetime of the excited state transition of undoped and p-doped InAs/GaAs quantum dots (QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited states. The radiative lifetime of the undoped QDs increases from 500 ps at 10 K to almost 3 ns at room temperature, consistent with a Boltzmann redistribution of holes over the available energy states. The rate of increase can be suppressed by a factor of ∼2 by p-doping the QDs to maintain a hole population in the lowest confined dot states to high temperatures.

Original language	English
Article number	183108
Journal	Applied Physics Letters
Volume	101
Issue number	18
DOIs	https://doi.org/10.1063/1.4765349
Publication status	Published - 29 Oct 2012

Bibliographical note

Funding Information:
This work was supported by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan and the Engineering and Physical Sciences Research Council, UK. E.H. gratefully acknowledges support from the Daiwa Anglo-Japanese Foundation, and the Japan Society for the Promotion of Science.

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Photonics and Quantum

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title = "Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime",

abstract = "The radiative lifetime of the excited state transition of undoped and p-doped InAs/GaAs quantum dots (QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited states. The radiative lifetime of the undoped QDs increases from 500 ps at 10 K to almost 3 ns at room temperature, consistent with a Boltzmann redistribution of holes over the available energy states. The rate of increase can be suppressed by a factor of ∼2 by p-doping the QDs to maintain a hole population in the lowest confined dot states to high temperatures.",

author = "Edmund Harbord and S. Iwamoto and Y. Arakawa and P. Spencer and E. Clarke and R. Murray",

note = "Funding Information: This work was supported by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan and the Engineering and Physical Sciences Research Council, UK. E.H. gratefully acknowledges support from the Daiwa Anglo-Japanese Foundation, and the Japan Society for the Promotion of Science.",

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T1 - Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime

AU - Harbord, Edmund

AU - Iwamoto, S.

AU - Arakawa, Y.

AU - Spencer, P.

AU - Clarke, E.

AU - Murray, R.

N1 - Funding Information: This work was supported by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan and the Engineering and Physical Sciences Research Council, UK. E.H. gratefully acknowledges support from the Daiwa Anglo-Japanese Foundation, and the Japan Society for the Promotion of Science.

PY - 2012/10/29

Y1 - 2012/10/29

N2 - The radiative lifetime of the excited state transition of undoped and p-doped InAs/GaAs quantum dots (QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited states. The radiative lifetime of the undoped QDs increases from 500 ps at 10 K to almost 3 ns at room temperature, consistent with a Boltzmann redistribution of holes over the available energy states. The rate of increase can be suppressed by a factor of ∼2 by p-doping the QDs to maintain a hole population in the lowest confined dot states to high temperatures.

AB - The radiative lifetime of the excited state transition of undoped and p-doped InAs/GaAs quantum dots (QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited states. The radiative lifetime of the undoped QDs increases from 500 ps at 10 K to almost 3 ns at room temperature, consistent with a Boltzmann redistribution of holes over the available energy states. The rate of increase can be suppressed by a factor of ∼2 by p-doping the QDs to maintain a hole population in the lowest confined dot states to high temperatures.

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DO - 10.1063/1.4765349

M3 - Article (Academic Journal)

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JO - Applied Physics Letters

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IS - 18

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ER -

Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime

Abstract

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