Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs

Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

6 Citations (Scopus)
282 Downloads (Pure)

Abstract

Dual- and triple-well bulk CMOS SRAMs fabricated at the 28-nm node were tested using alpha particles and heavy-ions over a range of supply voltages. Dual-well SRAMs have better Multiple Cell Upset (MCU) cross sections and spread for nominal voltage, while triple-well SRAMs are better for reduced voltages. TCAD simulations show that single-event upset reversal due to charge confinement is responsible for improved soft error rate (SER) performance at low voltage operation for triple-well SRAMs.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2C41-2C45
Volume2015-May
ISBN (Print)9781467373623
DOIs
Publication statusPublished - 26 May 2015
EventIEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
Duration: 19 Apr 201523 Apr 2015

Publication series

NameInternational Reliability Physics Symposium
PublisherIEEE
ISSN (Print)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
CountryUnited States
CityMonterey
Period19/04/1523/04/15

Keywords

  • alpha particle
  • dual-well
  • heavy ion
  • linear energy transfer (LET)
  • MCU
  • soft error rate(SER)
  • SRAM
  • triple-well

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