Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells

Yun Sun, M. P. Vaughan, A. Agarwal, M. Yilmaz, B. Ulug, A. Ulug, N. Balkan*, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

11 Citations (Scopus)

Abstract

We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped Gax In1-x Ny As1-y GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1× 107 cm s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.

Original languageEnglish
Article number205316
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume75
Issue number20
DOIs
Publication statusPublished - 11 May 2007

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