Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis

JW Pomeroy, M Kuball, MJ Uren, KP Hilton, RS Balmer, T Martin

Research output: Contribution to journal › Article (Academic Journal) › peer-review

37 Citations (Scopus)

Translated title of the contribution	Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis
Original language	English
Pages (from-to)	023507
Number of pages	3
Journal	Applied Physics Letters
Volume	88(2)
Publication status	Published - Jan 2006

Publisher: Amer. Inst. Physics

Research Groups and Themes

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title = "Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis",

author = "JW Pomeroy and M Kuball and MJ Uren and KP Hilton and RS Balmer and T Martin",

note = "Publisher: Amer. Inst. Physics",

year = "2006",

month = jan,

language = "English",

volume = "88(2)",

pages = "023507",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis

AU - Pomeroy, JW

AU - Kuball, M

AU - Uren, MJ

AU - Hilton, KP

AU - Balmer, RS

AU - Martin, T

N1 - Publisher: Amer. Inst. Physics

PY - 2006/1

Y1 - 2006/1

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 88(2)

SP - 023507

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -