Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs

Matt E Appleby; Yushi Wang; Qilei Wang; Jiaqi Yan; Harry C P Dymond; Saeed Jahdi; Bernard H Stark

doi:10.30420/566262462

Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs

Matt E Appleby^*, Yushi Wang, Qilei Wang, Jiaqi Yan, Harry C P Dymond, Saeed Jahdi, Bernard H Stark

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

This paper demonstrates the benefits, downsides, and instrumentation requirements of switching 1.7 kV, 35 mΩ SiC MOSFETs at 130+ V/ns, beyond the speed used by the device manufacturer for datasheet characterisation. Experimental results are obtained in a 1200 V, 50 A bridge leg, and comparisons are made between passive voltage probes, optically isolated differential probes, shunt current measurement, Rogowski coils, and Infinity Sensors. At 130 V/ns, a 24% improvement over the datasheet characterised switching loss is found, however the limitations of Rogowski coils and passive probes become significant. The methods demonstrated should permit design engineers to explore switching speed and efficiency limitations in their applications.

Original language	English
Title of host publication	PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Place of Publication	Nürnberg, Germany
Publisher	VDE Verlag
Pages	3271-3280
Number of pages	10
ISBN (Print)	9783800762620
DOIs	https://doi.org/10.30420/566262462
Publication status	Published - 29 Aug 2024
Event	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024 - Nürnberg, Germany Duration: 11 Jun 2024 → 13 Jun 2024 https://pcim.mesago.com/nuernberg/en.html

Publication series

Name	Proceedings (PCIM Europe)
Publisher	VDE
ISSN (Print)	2191-3358

Conference

Conference	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024
Abbreviated title	PCIM Europe 2024
Country/Territory	Germany
City	Nürnberg
Period	11/06/24 → 13/06/24
Internet address	https://pcim.mesago.com/nuernberg/en.html

Bibliographical note

Publisher Copyright:
© VDE VERLAG GMBH · Berlin · Offenbach.

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Accepted author manuscript, 2.13 MBLicence: CC BY

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Appleby, M. E., Wang, Y., Wang, Q., Yan, J., Dymond, H. C. P., Jahdi, S., & Stark, B. H. (2024). Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs. In PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 3271-3280). (Proceedings (PCIM Europe)). VDE Verlag. https://doi.org/10.30420/566262462

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title = "Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs",

abstract = "This paper demonstrates the benefits, downsides, and instrumentation requirements of switching 1.7 kV, 35 mΩ SiC MOSFETs at 130+ V/ns, beyond the speed used by the device manufacturer for datasheet characterisation. Experimental results are obtained in a 1200 V, 50 A bridge leg, and comparisons are made between passive voltage probes, optically isolated differential probes, shunt current measurement, Rogowski coils, and Infinity Sensors. At 130 V/ns, a 24% improvement over the datasheet characterised switching loss is found, however the limitations of Rogowski coils and passive probes become significant. The methods demonstrated should permit design engineers to explore switching speed and efficiency limitations in their applications.",

author = "Appleby, {Matt E} and Yushi Wang and Qilei Wang and Jiaqi Yan and Dymond, {Harry C P} and Saeed Jahdi and Stark, {Bernard H}",

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Appleby, ME , Wang, Y , Wang, Q , Yan, J , Dymond, HCP , Jahdi, S & Stark, BH 2024, Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs. in PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings (PCIM Europe), VDE Verlag, Nürnberg, Germany, pp. 3271-3280, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024, Nürnberg, Germany, 11/06/24. https://doi.org/10.30420/566262462

Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs. / Appleby, Matt E ; Wang, Yushi ; Wang, Qilei et al.
PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nürnberg, Germany: VDE Verlag, 2024. p. 3271-3280 (Proceedings (PCIM Europe)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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T1 - Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs

AU - Appleby, Matt E

AU - Wang, Yushi

AU - Wang, Qilei

AU - Yan, Jiaqi

AU - Dymond, Harry C P

AU - Jahdi, Saeed

AU - Stark, Bernard H

PY - 2024/8/29

Y1 - 2024/8/29

N2 - This paper demonstrates the benefits, downsides, and instrumentation requirements of switching 1.7 kV, 35 mΩ SiC MOSFETs at 130+ V/ns, beyond the speed used by the device manufacturer for datasheet characterisation. Experimental results are obtained in a 1200 V, 50 A bridge leg, and comparisons are made between passive voltage probes, optically isolated differential probes, shunt current measurement, Rogowski coils, and Infinity Sensors. At 130 V/ns, a 24% improvement over the datasheet characterised switching loss is found, however the limitations of Rogowski coils and passive probes become significant. The methods demonstrated should permit design engineers to explore switching speed and efficiency limitations in their applications.

AB - This paper demonstrates the benefits, downsides, and instrumentation requirements of switching 1.7 kV, 35 mΩ SiC MOSFETs at 130+ V/ns, beyond the speed used by the device manufacturer for datasheet characterisation. Experimental results are obtained in a 1200 V, 50 A bridge leg, and comparisons are made between passive voltage probes, optically isolated differential probes, shunt current measurement, Rogowski coils, and Infinity Sensors. At 130 V/ns, a 24% improvement over the datasheet characterised switching loss is found, however the limitations of Rogowski coils and passive probes become significant. The methods demonstrated should permit design engineers to explore switching speed and efficiency limitations in their applications.

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BT - PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

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T2 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024

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ER -

Appleby ME , Wang Y , Wang Q , Yan J , Dymond HCP , Jahdi S et al. Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs. In PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nürnberg, Germany: VDE Verlag. 2024. p. 3271-3280. (Proceedings (PCIM Europe)). doi: 10.30420/566262462

Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mΩ SiC MOSFETs

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