Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

A Sarua, H Ji, M Kuball, MJ Uren, T Martin, KP Hilton, RS Balmer

Research output: Contribution to journalArticle (Academic Journal)peer-review

191 Citations (Scopus)

Abstract

Self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature maps of powered devices. Micro-Raman spectroscopy was used to obtain high-spatial-resolution temperature profiles over the active area of the devices. Depth scans were performed to obtain temperature in the heat-sinking SiC substrate. Limitations in temperature and spatial resolution, and relative advantages of both techniques are discussed. Results are compared to three-dimensional finite-difference simulations.
Translated title of the contributionIntegrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
Original languageEnglish
Pages (from-to)2438 - 2447
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume53 (10)
DOIs
Publication statusPublished - Oct 2006

Bibliographical note

Publisher: IEEE

Structured keywords

  • CDTR

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