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Self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography. IR imaging provided large-area-overview temperature maps of powered devices. Micro-Raman spectroscopy was used to obtain high-spatial-resolution temperature profiles over the active area of the devices. Depth scans were performed to obtain temperature in the heat-sinking SiC substrate. Limitations in temperature and spatial resolution, and relative advantages of both techniques are discussed. Results are compared to three-dimensional finite-difference simulations.
|Translated title of the contribution||Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures|
|Pages (from-to)||2438 - 2447|
|Number of pages||10|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - Oct 2006|
Bibliographical notePublisher: IEEE