Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

M Tapajna, R.J.T Simms, Y Pei, U.K Mishra, M Kuball

Research output: Contribution to journalArticle (Academic Journal)

102 Citations (Scopus)

Abstract

A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild OFF-state stress increases irreversibly the number of traps located in the near-surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices changes its nature to interacting defect after the OFF-state stress, accompanied by an activation energy change. These results are consistent with trap generation in the near-surface AlGaN region at the gate edge related to high electric field and gate leakage current, as stressing does not result in the generation of cracks in the AlGaN layer.
Translated title of the contributionIntegrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
Original languageEnglish
Pages (from-to)662 - 664
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
Publication statusPublished - Jul 2010

Structured keywords

  • CDTR

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