Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices

Martin Kuball, Andrei Sarua, James W. Pomeroy, Aaron Falk, Grant Albright, Michael J. Uren, Trevor Martin

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

We report on the development of a novel thermography technique, integrated Raman - IR thermography, illustrated here on AlGaN/GaN electronic devices. As it is a generic technique future application to Si, GaAs and other devices is anticipated. While IR thermography can provide fast temperature overviews, its current use for many of today's technologies is complicated by the fact that it does not provide the spatial resolution needed to probe sub-micron/micron size active device areas Integrating IR with micro-Raman thermography, providing temperature information with similar to 0.5 mu m spatial resolution, enables unique thermal analysis of semiconductor devices to a level not possible before. This opens new opportunities for device performance and reliability optimization, and failure analysis of modern semiconductor technology, in research, development, and quality control / manufacturing environments.

Original languageEnglish
Title of host publicationISTFA 2007
Place of PublicationMATERIALS PARK
PublisherASM International
Pages1-5
Number of pages5
ISBN (Print)978-0-87170-863-2
Publication statusPublished - 2007
Event33rd International Symposium for Testing and Failure Analysis - San Jose, United States
Duration: 4 Nov 20078 Nov 2007

Conference

Conference33rd International Symposium for Testing and Failure Analysis
CountryUnited States
CitySan Jose
Period4/11/078/11/07

Structured keywords

  • CDTR

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